HSCH-5310 Avago Technologies US Inc., HSCH-5310 Datasheet
HSCH-5310
Specifications of HSCH-5310
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HSCH-5310 Summary of contents
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... RF characteristics through K-band. The basic medium barrier devices in this family are DC tested HSCH-5310 and -5312. Equivalent low barrier devices are HSCH-5330 and -5332. Batch matched versions are available as HSCH-5331. The HSCH-5340 is selected for applications requiring guaranteed RF-tested performance GHz ...
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... Diode Mounting Temperature .............................. +350 C for 10 sec. max. These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode. Table IA. Electrical Specifications for RF Tested Diodes at T Max. Part Noise Number Figure HSCH- Barrier NF (dB) 5314 Medium 7 GHz 5340 Low 7 ...
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... Typical Value TSS –54 6.6 mV 1400 V Typical Value TSS – 1.8 V HSCH-5312 HSCH-5314 HSCH-5310 5 5 0.13 0.09 0.69 0.69 10E-5 10E 10E- 10E-10 1.08 1. 0.65 0. 0.5 0.5 Maximum Maximum Maximum Total Forward Leakage Capacitance Voltage Current C (pF) V (mV 0.15 500 ...
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... C +25 C – 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE (V) Figure 1. Typical forward characteristics for medium barrier beam lead diodes. HSCH-5310 series. 1.0 0.5 2 GHz 0.2 2 0.2 0.5 2.0 1.0 Figure 4. Typical admittance characteristics with 1 mA self bias. HSCH-5340. ...
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... GHz 0 0.2 0.5 2.0 1.0 Figure 6. Typical admittance characteristics with self bias. HSCH-5314. Models for Each Beam Lead Schottky Diode HSCH-5340 1 mA Self Bias 0.03 pF 0 Other HSCH-53xx Self Bias 0. 1.0 mA Self Bias Part Numbers HSCH-5314 5.0 5 3.0 ...
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... HSCH-5340 External Bias 0.03 pF 0 Part Numbers HSCH-5340 Other HSCH-53xx External Bias 0. Part Numbers HSCH-5314 2.8 For product information and a complete list of distributors, please go to our website: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. ...