D2012UK SEMELAB, D2012UK Datasheet - Page 3

• Manufacturer Part Number: D2012UK
• Description: MOSFET,RF,N CH,SE,28V,10W,1000MHZ,DP
• Manufacturer: SEMELAB

Specifications of D2012UK

• Drain Source Voltage Vds: 65V
• Continuous Drain Current Id: 4A
• Power Dissipation Max: 42W
• Operating Frequency Range: 1MHz To 500MHz
• Rf Transistor Case: DP
• No. Of Pins: RoHS Compliant
• Transistor Type: RF FET
• Rohs Compliant: Yes

Semelab plc.
,0'
G%F
3 RXW
:
Figure 3
Output Power and Efficiency vs. Input Power
Figure 1
Output Power and Gain vs. Input Power
























Telephone [phone]. Fax [phone].
E-mail:

3 LQ :
[e-mail]
!
#
!Freq
!MHz
100
200
300
400
500
600
700
800
900
1000

3 RXW :3(3


Vds=28V, Idq=0.8A
MHz S MA R 50
I 0+]
, GT $
9 GV 9
I 
I 
9 GV  9
, GT  $
0.841
0.871
0.891
0.902
0.923
0.933
0.955
0.955
0.966
0.955
mag
S11


0+]
  0+]
3RXW
JDLQ

-122
-146
-156
-163
-170
-174
-175
-177
ang
179
177

,0'
Typical S Parameters

Website:









24.547
11.482
*DLQ
G%
6.683
4.365
3.055
2.113
1.758
1.413
1.161
0.944
mag
S21

http://www.semelab.co.uk
ang
3 RXW
:
98
69
52
40
27
22
19
12
OPTIMUM SOURCE AND LOAD IMPEDANCE
5
3
Figure 2
Output Power and Efficiency vs. Input Power





0.01318
0.00653
0.00596
0.00891
0.01349
0.01862
0.02344
0.02851
0.03236






mag
0.01
S12
Frequency

MHz
1000
ang

13
10
49
71
79
85
82
80
80
0

3 LQ :
0.708
0.767
0.813
0.851
0.881
0.902
0.902
0.902
mag
0.49
0.61
S22

5.0 - j7.2

Z
I 0+]
, GT $
9 GV  9
-125
-137
-146
-155
-165
-166
-170
-177
-179
ang
S
-94

3RXW
(IILFLHQF\
D2012UK

2.4 - j7.1
Z

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Prelim. 12/00