SKIM429GD17E4HD SEMIKRON, SKIM429GD17E4HD Datasheet
SKIM429GD17E4HD
Specifications of SKIM429GD17E4HD
Available stocks
Related parts for SKIM429GD17E4HD
SKIM429GD17E4HD Summary of contents
Page 1
... SKiM429GD17E4HD ® SKiM 93 Trench IGBT Modules SKiM429GD17E4HD Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • Low inductance case • Isolated DCB (Direct Copper 2 3 Bonded) ceramic substrate • Pressure contact technology for thermal contacts and electrical contacts • High short circuit capability, self ...
Page 2
... SKiM429GD17E4HD ® SKiM 93 Trench IGBT Modules SKiM429GD17E4HD Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • Low inductance case • Isolated DCB (Direct Copper 2 3 Bonded) ceramic substrate • Pressure contact technology for thermal contacts and electrical contacts • High short circuit capability, self ...
Page 3
... SKiM429GD17E4HD Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 4 – 11.12.2009 = ...
Page 4
... SKiM429GD17E4HD Fig. 7: Typ. switching times vs. I Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 4 – 11.12.2009 ...
Page 5
... SKiM429GD17E4HD SKIM® This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 4 – 11.12.2009 5 ...