SKiM609GAR12E4
®
SKiM
93
Trench IGBT Modules
SKiM609GAR12E4
Target Data
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• V
with positive temperature
CE(sat)
coefficient
• Low inductance case
• Isolated by Al
O
DCB (Direct Copper
2
3
Bonded) ceramic substrate
• Pressure contact technology
forthermal contacts and
electricalcontacts
• High short circuit capability, self
limiting to 6 x I
C
• Integrated temperature sensor
Typical Applications
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
GAR
© by SEMIKRON
Absolute Maximum Ratings
Symbol
Conditions
IGBT
V
CES
I
T
= 25 °C
s
C
T
= 175 °C
j
T
= 70 °C
s
I
Cnom
I
I
= 3xI
CRM
CRM
Cnom
V
GES
V
= 800 V
CC
≤ 15 V
t
V
T
= 150 °C
psc
GE
j
≤ 1200 V
V
CES
T
j
Inverse diode
T
= 25 °C
I
s
F
T
= 175 °C
j
T
= 70 °C
s
I
Fnom
I
I
= 3xI
FRM
FRM
Fnom
t
= 10 ms, sin 180°, T
= 25 °C
I
FSM
p
j
T
j
Freewheeling diode
I
T
= 25 °C
F
s
T
= 175 °C
j
T
= 70 °C
s
I
Fnom
I
I
= 3xI
FRM
FRM
Fnom
I
t
= 10 ms, sin 180°, T
= 25 °C
p
j
FSM
T
j
Module
I
t(RMS)
T
stg
V
AC sinus 50 Hz, t = 1 min
isol
Characteristics
Symbol
Conditions
IGBT
I
= 600 A
T
= 25 °C
V
C
CE(sat)
j
V
= 15 V
GE
T
= 150 °C
j
chiplevel
V
T
= 25 °C
j
CE0
T
= 150 °C
j
T
= 25 °C
r
j
CE
V
= 15 V
GE
T
= 150 °C
j
V
V
=V
, I
= 24 mA
GE(th)
GE
CE
C
I
T
= 25 °C
V
= 0 V
j
CES
GE
V
= 1200 V
CE
C
f = 1 MHz
ies
V
= 25 V
CE
f = 1 MHz
C
oes
V
= 0 V
GE
C
f = 1 MHz
res
Q
V
= - 8 V...+ 15 V
G
GE
T
= 25 °C
R
j
Gint
Rev. 2 – 26.08.2009
Values
Unit
1200
V
748
A
608
A
600
A
1800
A
-20 ... 20
V
10
µs
-40 ... 175
°C
139
A
110
A
150
A
450
A
900
A
-40 ... 175
°C
1397
A
1107
A
1350
A
4050
A
6480
A
-40 ... 175
°C
700
A
-40 ... 125
°C
2500
V
min.
typ.
max.
Unit
1.85
2.10
V
2.25
2.45
V
0.8
0.9
V
0.7
0.8
V
1.8
2.0
mΩ
2.6
2.8
mΩ
5
5.8
6.5
V
0.1
0.3
mA
mA
35.2
nF
2.32
nF
1.88
nF
3400
nC
Ω
1.3
1