IGBT Module

SKIM609GAR12E4

Manufacturer Part NumberSKIM609GAR12E4
DescriptionIGBT Module
ManufacturerSEMIKRON
SKIM609GAR12E4 datasheet
 

Specifications of SKIM609GAR12E4

Dc Collector Current748ACollector Emitter Voltage Vces1.2kV
Collector Emitter Voltage V(br)ceo800mVNo. Of Pins33
Package / CaseSKiM 93Family/systemSKiM 63\/93
Voltage (v)1200Current (a)600
Chip-typeIGBT 4 (Trench)CaseSKIM 93
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
Page 1/5

Download datasheet (378Kb)Embed
Next
SKiM609GAR12E4
®
SKiM
93
Trench IGBT Modules
SKiM609GAR12E4
Target Data
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• V
with positive temperature
CE(sat)
coefficient
• Low inductance case
• Isolated by Al
O
DCB (Direct Copper
2
3
Bonded) ceramic substrate
• Pressure contact technology
forthermal contacts and
electricalcontacts
• High short circuit capability, self
limiting to 6 x I
C
• Integrated temperature sensor
Typical Applications
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
GAR
© by SEMIKRON
Absolute Maximum Ratings
Symbol
Conditions
IGBT
V
CES
I
T
= 25 °C
s
C
T
= 175 °C
j
T
= 70 °C
s
I
Cnom
I
I
= 3xI
CRM
CRM
Cnom
V
GES
V
= 800 V
CC
≤ 15 V
t
V
T
= 150 °C
psc
GE
j
≤ 1200 V
V
CES
T
j
Inverse diode
T
= 25 °C
I
s
F
T
= 175 °C
j
T
= 70 °C
s
I
Fnom
I
I
= 3xI
FRM
FRM
Fnom
t
= 10 ms, sin 180°, T
= 25 °C
I
FSM
p
j
T
j
Freewheeling diode
I
T
= 25 °C
F
s
T
= 175 °C
j
T
= 70 °C
s
I
Fnom
I
I
= 3xI
FRM
FRM
Fnom
I
t
= 10 ms, sin 180°, T
= 25 °C
p
j
FSM
T
j
Module
I
t(RMS)
T
stg
V
AC sinus 50 Hz, t = 1 min
isol
Characteristics
Symbol
Conditions
IGBT
I
= 600 A
T
= 25 °C
V
C
CE(sat)
j
V
= 15 V
GE
T
= 150 °C
j
chiplevel
V
T
= 25 °C
j
CE0
T
= 150 °C
j
T
= 25 °C
r
j
CE
V
= 15 V
GE
T
= 150 °C
j
V
V
=V
, I
= 24 mA
GE(th)
GE
CE
C
I
T
= 25 °C
V
= 0 V
j
CES
GE
V
= 1200 V
CE
C
f = 1 MHz
ies
V
= 25 V
CE
f = 1 MHz
C
oes
V
= 0 V
GE
C
f = 1 MHz
res
Q
V
= - 8 V...+ 15 V
G
GE
T
= 25 °C
R
j
Gint
Rev. 2 – 26.08.2009
Values
Unit
1200
V
748
A
608
A
600
A
1800
A
-20 ... 20
V
10
µs
-40 ... 175
°C
139
A
110
A
150
A
450
A
900
A
-40 ... 175
°C
1397
A
1107
A
1350
A
4050
A
6480
A
-40 ... 175
°C
700
A
-40 ... 125
°C
2500
V
min.
typ.
max.
Unit
1.85
2.10
V
2.25
2.45
V
0.8
0.9
V
0.7
0.8
V
1.8
2.0
mΩ
2.6
2.8
mΩ
5
5.8
6.5
V
0.1
0.3
mA
mA
35.2
nF
2.32
nF
1.88
nF
3400
nC
Ω
1.3
1

Related parts for SKIM609GAR12E4

Part Number DescriptionManufacturer Datasheet
SKIM609GAL12E4  SKIM609GAL12E4 IGBT Module SEMIKRON
  SKiM600GD126DLM SEMIKRON
  SKiM606GD066HD SEMIKRON
  SKIM601GD126DLM SKIM601GD126DLM SEMIKRON
  SKIM601GD126DM IGBT Modules SEMIKRON [Semikron International]
  SKIM606GD066HD_11 5Trench IGBT Modules SEMIKRON [Semikron International]
  SK80GM063 Semikron International [IGBT Module] Semikron International
  SKIIP23NAB126V1 Semikron International [3-phase bridge rectifier + brake chopper + 3-phase bridge inverter] Semikron International
  SKIIP24NAB126V10 Semikron International [3-phase bridge rectifier + brake chopper + 3-phase bridge inverter] Semikron International
  SKIIP11NAB126V1 Semikron International [3-phase bridge rectifier + brake chopper + 3-phase bridge inverter] Semikron International
  SKM214A Semikron International [Power MOSFET Modules] Semikron International
  SKKH72/16E Semikron International [Thyristor / Diode Modules] Semikron International
  SKKH91/16E Semikron International [SEMIPACK1 Thyristor / Diode Modules] Semikron International
  SKKT72/08E Semikron International [Thyristor / Diode Modules] Semikron International
  SKB52/12 Semikron International [Power Bridge Rectifiers] Semikron International

SKIM609GAR12E4 Summary of contents

  • Page 1

    ... SKiM609GAR12E4 ® SKiM 93 Trench IGBT Modules SKiM609GAR12E4 Target Data Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • V with positive temperature CE(sat) coefficient • Low inductance case • Isolated DCB (Direct Copper 2 3 Bonded) ceramic substrate • Pressure contact technology ...

  • Page 2

    ... SKiM609GAR12E4 ® SKiM 93 Trench IGBT Modules SKiM609GAR12E4 Target Data Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • V with positive temperature CE(sat) coefficient • Low inductance case • Isolated DCB (Direct Copper 2 3 Bonded) ceramic substrate • Pressure contact technology ...

  • Page 3

    ... SKiM609GAR12E4 Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 2 – 26.08.2009 = ...

  • Page 4

    ... SKiM609GAR12E4 Fig. 7: Typ. switching times vs. I Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 2 – 26.08.2009 ...

  • Page 5

    ... SKiM609GAR12E4 SKIM® 93 GAR This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 2 – 26.08.2009 5 ...

Related keywords:

  • SKIM609GAR12E4 datasheet
  • SKIM609GAR12E4 data sheet
  • SKIM609GAR12E4 pdf datasheet
  • SKIM609GAR12E4 component
  • SKIM609GAR12E4 part
  • SKIM609GAR12E4 distributor
  • SKIM609GAR12E4 RoHS
  • SKIM609GAR12E4 datasheet download