CM50DY-28H Powerex Inc, CM50DY-28H Datasheet - Page 3

• Manufacturer Part Number: CM50DY-28H
• Description: IGBT MODULE, 1400V, 50A, IGBTMOD
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM50DY-28H

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 1.4kV
• Power Dissipation Pd: 400W
• Operating Temperature Range: -40°C To +150°C
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1400V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 50A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 10nF @ 10V
• Power - Max: 400W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM50DY-28H
Dual IGBTMOD™ H-Series Module
50 Amperes/1400 Volts
100
10
10
10
10
10
80
60
40
20
10
0
4
3
2
1
0
8
6
4
2
0
10
0
SATURATION VOLTAGE CHARACTERISTICS
0
0
T
COLLECTOR-EMITTER VOLTAGE, V
j
T
= 25
V
j
GATE-EMITTER VOLTAGE, V
= 25°C
SWITCHING CHARACTERISTICS
COLLECTOR CURRENT, I
GE
OUTPUT CHARACTERISTICS
o
2
4
C
= 20V
t
t
d(on)
d(off)
COLLECTOR-EMITTER
15
t
t
r
f
HALF-BRIDGE
4
(TYPICAL)
(TYPICAL)
(TYPICAL)
8
10
13
1
7
12
6
C
, (AMPERES)
I
C
I
C
GE
V
V
R
T
= 100A
j
CC
GE
= 50A
G
12
11
, (VOLTS)
10
= 125°C
8
CE
9
I
= 6.3
C
, (VOLTS)
16
= 800V
= ±15V
8
= 20A
10
10
20
2
100
10
10
10
10
10
10
80
60
40
20
0
3
2
1
2
1
0
10
1.0
0
REVERSE RECOVERY CHARACTERISTICS
0
EMITTER-COLLECTOR VOLTAGE, V
T
di/dt = -100A/ sec
T
V
j
j
CE
GATE-EMITTER VOLTAGE, V
= 25°C
= 25°C
1.5
TRANSFER CHARACTERISTICS
FORWARD CHARACTERISTICS
EMITTER CURRENT, I
= 10V
4
T
T
j
j
= 25°C
= 125°C
FREE-WHEEL DIODE
I
t
rr
2.0
rr
(TYPICAL)
(TYPICAL)
8
(TYPICAL)
10
2.5
1
12
E
, (AMPERES)
3.0
GE
, (VOLTS)
EC
16
, (VOLTS)
3.5
10
4.0
20
2
10
10
10
1
0
-1
10
10
10
10
10
20
16
12
-1
-2
2
1
0
8
4
0
5
4
3
2
1
0
10
0
SATURATION VOLTAGE CHARACTERISTICS
0
-1
V
f = 1MHz
COLLECTOR-EMITTER VOLTAGE, V
GE
I
V
C
GE
COLLECTOR-CURRENT, I
= 50A
= 0V
20
= 15V
100
T
T
CAPACITANCE VS. V
j
j
COLLECTOR-EMITTER
= 25°C
= 125°C
GATE CHARGE, V
GATE CHARGE, Q
10
V
CC
0
(TYPICAL)
40
(TYPICAL)
= 600V
200
60
G
C
10
, (nC)
, (AMPERES)
V
GE
1
CE
CC
300
CE
, (VOLTS)
= 800V
80
C
C
C
oes
ies
res
10
100
400
2
279