CM300DY-24A Powerex Inc, CM300DY-24A Datasheet - Page 3

IGBT Module

CM300DY-24A

Manufacturer Part Number
CM300DY-24A
Description
IGBT Module
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet

Specifications of CM300DY-24A

Transistor Polarity
N Channel
Power Dissipation Pd
1.89kW
Collector Emitter Voltage V(br)ceo
1.2kV
Continuous Collector Current Ic
300A
Collector Emitter Saturation Voltage Vce(sat)
2.1V
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 300A
Current - Collector (ic) (max)
300A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
47nF @ 10V
Power - Max
1890W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Prx Availability
RequestQuote
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Voltage
1200V
Current
300A
Circuit Configuration
Dual
Rohs Compliant
Yes
Recommended Gate Driver
VLA503
Recommended Dc To Dc Converter
VLA106-15242 or VLA106-24242
Interface Circuit Ref Design
BG2B-5015
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
835-1015

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM300DY-24A
Manufacturer:
MITSUBISHI
Quantity:
550
Part Number:
CM300DY-24A
Manufacturer:
MIT
Quantity:
20 000
Part Number:
CM300DY-24A
Quantity:
55
Company:
Part Number:
CM300DY-24A
Quantity:
500
Company:
Part Number:
CM300DY-24A
Quantity:
500
CM300DY-24A
Dual IGBTMOD™ A-Series Module
300 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case*
Thermal Resistance, Junction to Case*
Contact Thermal Resistance
External Gate Resistance
*T
10/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
C
600
450
300
150
, T
10
10
10
0
3
2
1
f
measured point is just under the chips.
0
0
V
COLLECTOR-EMITTER VOLTAGE, V
EMITTER-COLLECTOR VOLTAGE, V
GE
20V
FORWARD CHARACTERISTICS
=
OUTPUT CHARACTERISTICS
1
2
FREE-WHEEL DIODE
15
13
(TYPICAL)
(TYPICAL)
2
4
6
3
T
T
CE
EC
j
j
T
= 25°C
= 125°C
j
, (VOLTS)
4
, (VOLTS)
8
= 25 °C
12
11
10
9
10
5
R
R
Symbol
R
th(j-c)
th(j-c)
th(c-f)
R
10
10
10
10
G
-1
0
4
3
2
1
2
1
0
10
Q
SATURATION VOLTAGE CHARACTERISTICS
D
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
V
j
GE
GE
COLLECTOR-CURRENT, I
= 25°C unless otherwise specified
Per 1/2 Module, Thermal Grease Applied
= 0V
= 15V
T
T
150
j
j
CAPACITANCE VS. V CE
COLLECTOR-EMITTER
= 25°C
= 125°C
10
0
(TYPICAL)
(TYPICAL)
Per FWDi 1/2 Module
Per IGBT 1/2 Module
300
Test Conditions
C
10
, (AMPERES)
1
450
C
C
C
CE
ies
oes
res
, (VOLTS)
600
10
2
10
10
10
10
8
6
4
2
0
3
2
1
10
SATURATION VOLTAGE CHARACTERISTICS
6
T
1
Min.
I
j
C
1.0
= 25°C
= 120A
GATE-EMITTER VOLTAGE, V
t
SWITCHING CHARACTERISTICS
COLLECTOR CURRENT, I
8
d(off)
COLLECTOR-EMITTER
10
HALF-BRIDGE
0.02
Typ.
(TYPICAL)
(TYPICAL)
12
10
2
14
I
C
I
C
= 600A
= 300A
C
0.066
V
V
R
T
Inductive Load
Max.
, (AMPERES)
0.12
CC
GE
j
GE
G
16
16
= 125°C
= 1.0Ω
, (VOLTS)
= 600V
= 15V
t
t
t
f
r
d(on)
18
°C/W
°C/W
°C/W
Units
10
20
Ω
3
3

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