PM50RL1B120 Powerex Inc, PM50RL1B120 Datasheet - Page 7

• Manufacturer Part Number: PM50RL1B120
• Description: IGBT MODULE, 1.2KV, 50A
• Manufacturer: Powerex Inc

Specifications of PM50RL1B120

• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 462W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -20°C To +150°C
• No. Of Pins: 37
• Voltage: 1200V
• Current: 50A
• Circuit Configuration: 7-Pac
• Package: 120x55mm - B
• Rohs Compliant: Yes
• Recommended Accessory: BP7B-LB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Version 4 Super Mini:
The Powerex Version 4 Super Mini-DIP-IPM family offers
the widest line-up available in the smallest package on the
market. The Super Mini package measures in at
24x38x3.5mm but packs a super power in this small size,
covering 3A through 30A at 600V in one package.
This family of devices allows the end user to incorporate
one board design across multiple drive frame ratings. The
end result is decreased size, lower parts count and lower
cost. The Super Mini is also completely RoHS
compliant.
Designed with a 5th generation IGBT that provides
low loss, the Version 4 family also offers low
thermal impedance due to the incorporation of
new isolation technology. The new isolation
material yields a 20% reduction in thermal resistance
in comparison to the previous generation device.
Powerex Expands its High Temperature,
High Voltage Packaging Capability
Powerex has developed 200C capable modules for
evaluation of high-voltage silicon carbide (SiC) devices for
research and development programs and is working to
extend this technology to higher temperatures.
Power devices fabricated from silicon wafers have
fundamental limitations when scaling up to high voltages
and operating at high temperatures. Present maximum
operating temperatures for silicon-based diodes are 150C –
200C and 125C – 150C for SCRs & IGBTs.
to different material properties, power devices fabricated
from SiC wafers can be scaled to voltages higher than
10kV and can operate at temperatures in excess of 250C.
Silicon carbide MOSFETs presently operate up to 200C.
In order to fully utilize the high operating temperature
capability of SiC devices, module package technology must
move from the present 150C operating/storage level to as
high as 300C. While the ceramic and metal components
Widest Line-Up, Smallest Package
However, due
Additional options available with this family include longer
leads, zigzag lead form and open emitters, which will
allow current sensing in each phase leg for motor and
circuit optimization. Over temperature protection is yet
another option. While an actual operating temperature is
not provided, this option provides internal protection for
the module.
typically used in power modules can operate at
temperatures above 200C, the other materials that are
used in modules, such as solder, potting gel and case
plastics, have to be carefully selected. Solders with
melting temperatures well above 200C, are readily
available and are currently used by Powerex to form
strong, reliable high temperature solder joints in power
modules.
also commercially available that can operate in the 250C
range. Silicone potting gels presently used in power
modules are capable of extended operation at 200C,
making them the limiting factor in the temperature
capability of the module.
As SiC device technology price becomes lower with time
and volume, Powerex is positioned to support commercial
packaging of SiC devices. For more information, contact
Duane Prusia at 724-925-4402
Machinable and injection-moldable plastics are
The 3-20A Version 4 Super Mini DIP-
Version 4 Super Mini DIP-IPM
IPMs are currently in mass
production. Samples of the 30A
device will be available in May
with mass production
commencing in August.
Actual Product Size
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