SEMIX653GB176HDS SEMIKRON, SEMIX653GB176HDS Datasheet
SEMIX653GB176HDS
Specifications of SEMIX653GB176HDS
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SEMIX653GB176HDS Summary of contents
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... SEMiX653GB176HDs SEMiX ® 3s Trench IGBT Modules SEMiX653GB176HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders GB © by SEMIKRON Absolute Maximum Ratings Symbol Conditions ...
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... SEMiX653GB176HDs SEMiX ® 3s Trench IGBT Modules SEMiX653GB176HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders GB 2 Characteristics Symbol Conditions Inverse diode I = 450 A ...
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... SEMiX653GB176HDs Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 2 – 13.01.2012 = ...
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... SEMiX653GB176HDs Fig. 7: Typ. switching times vs Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 2 – 13.01.2012 G CC'+EE' ...
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... SEMiX653GB176HDs SEMiX 3s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © ...