SKIM 250GD128D SEMIKRON, SKIM 250GD128D Datasheet

IGBT MODULE, 1.2KV, 240A, SKIM 4

SKIM 250GD128D

Manufacturer Part Number
SKIM 250GD128D
Description
IGBT MODULE, 1.2KV, 240A, SKIM 4
Manufacturer
SEMIKRON
Datasheet
1.SKIM_250GD128D.pdf (5 pages)

Specifications of SKIM 250GD128D

Dc Collector Current
240A
Collector Emitter Voltage Vces
1.2kV
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
No. Of Pins
37
Current Rating
180A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
SKiM 250 GD 128 D
© by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
V
V
I
I
V
P
T
T
V
humidity
climate
Inverse Diode
I
I
I
I
Characteristics
Symbol Conditions
V
V
I
I
V
C
C
C
L
R
t
t
t
t
E
E
Inverse Diode
V
V
V
r
I
Q
Thermal Characteristics
R
R
R’
R’
Temperature Sensor
R
tolerance
C
CM
F
FM
FSM
2
CES
GES
d(on)
r
d(off)
f
RRM
T
CE
j
cop
CES
CGR
GES
tot
isol
t
(BR)CES
GE(th)
CEsat
on
off
F
F
TO
, (T
ies
oes
res
CC´+ EE´
thjh
thjhD
TS
rr
thjc
thjcD
= –I
= V
= V
= –I
stg
6)
C
6)
4)
EC
EC
CM
)
R
T
T
per IGBT, T
max. case operating temperature
AC, 1 min.
IEC-EN 60721-3-3
IEC 68 T.1
T
T
t
t
V
V
V
V
V
I
resistance, terminal-chip; T
I
I
T
T
I
I
per IGBT
per diode
per IGBT
per diode
T = 25 °C / 100 °C
T = 25 °C / 100 °C
p
p
C
F
F
F
F
HS
HS
HS
HS
j
j
GE
GE
GE
GE
CE
GE
= 10 ms; sin.; T
= 10 ms; T
= 200 A
= 100 A
= 200 A; T
= 200 A; T
= 200 A
V
V
f = 1 MHz
V
V
I
R
T
= 125 °C
= 125 °C
C
j
GE
CE
CC
GE
8)
= 25/70 °C
= 25/70 °C; t
= 25/70 °C
= 25/70 °C; t
Gon
= V
= 20 k
= 0, I
= V
= 0
= 20 V, V
= 125 °C
= 200 A, ind. load
= 600 V
= 25 V
= 0
= +15 V / –15 V
= R
CE
CES
C
, I
= 1 mA
Goff
HS
C
j
j
j
T
V
T
V
T
= 4 mA
1)
= 150 °C
1)
CE
= 25 (125) °C
= 25 (125) °C
5)
= 25 °C
j
j
j
GE
GE
= 5
= 125 °C
= 25 °C
= 25 (125) °C
= 0
p
p
j
= 15 V;
= 0 V;
= 1 ms
= 1 ms
= 150 °C
3)
HS
2)
2)
= 25 °C
min.
4,5
V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
CES
– 40 ... +150 (125)
40/125/56
235 / 180
470 / 360
230 / 180
460 / 360
Values
1,0 / 1,67
24 200
2,3 (2,1)
1,8 (1,6)
3,0 / 2,0
1200
1200
2500
2200
010417
± 20
625
125
typ.
1,15
TBD
TBD
150
700
5,5
1,9
4,3
3,6
1,1
15
18
45
50
21
20
–
–
–
5
–
–
–
–
max. Units
0,285
0,071
0,105
0,20
500
6,5
2,3
2,6
20
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Units
°C/W
°C/W
°C/W
°C/W
m
m
mA
k
A
nH
mJ
mJ
nA
nF
nF
nF
ns
ns
ns
ns
°C
°C
%
W
V
V
V
V
V
V
A
V
V
A
A
V
V
A
A
A
C
2
s
SKiM
IGBT Modules
SKiM 250 GD 128 D
Preliminary Data
Features
•
•
•
•
•
•
•
Typical Applications
•
•
•
1)
2)
3)
4)
5)
6)
8)
Measured at chip level
See mounting instructions
Corresponding value. This value
N channel, homogeneous planar
IGBT Silicon structure with n+
buffer layer in SPT (soft punch
through) technology
Low inductance case
Fast & soft inverse CAL diodes
Isolated by DCB (Direct Copper
Bonded) ceramic plate
Pressure contact technology for
thermal contacts
Spring contact system to attach
driver PCB to the control
terminals
Integrated temperature sensor
Switched mode power supplies
Three phase inverters for AC
motor speed control
Switching (not for linear use)
T
specified
TBD
Use V
cannot be measured. It is only given
for comparison.
CAL = Controlled Axial Lifetime
Technology
HS
= 25 °C, unless otherwise
®
GEoff
4
= – 5 ... – 15 V
GD
B 18 – 35
8)

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SKIM 250GD128D Summary of contents

Page 1

... R’ per IGBT thjc 6) R’ per diode thjcD Temperature Sensor °C / 100 °C TS tolerance °C / 100 °C © by SEMIKRON Values 1200 1200 235 / 180 470 / 360 ± 20 625 – 40 ... +150 (125) 125 2500 40/125/56 230 / 180 460 / 360 2200 24 200 min ...

Page 2

... L < 900 200 A CN 150 100 Fig. 6 Rated current vs. temperature 010417 SKiM 250GD128D.xls - off SKiM 250GD128D.xls - 4 0 200 400 600 800 1000 1200 1400 V CE SKiM 250GD128D.xls - 100 120 140 Ths 125 ° 600 200 125 ° ± ...

Page 3

... Fig. 8 Typ. output characteristic 400 A 350 300 250 200 150 100 Fig. 10 100 I = 200 A Cpuls nF 800V 2000 nC Fig. 12 Typ. capacitances vs. V 010417 SKiM 250GD128D.xls - 8 17V 15V 13V 11V µs; 125 °C p SKiM 250GD128D.xls - SKiM 250GD128D.xls - 12 C ies C oes C res MHz – 37 ...

Page 4

... SKiM 250GD128D.xls - 17 1 K/W 0,1 0,01 D=0,50 0,20 0,10 0,05 0,001 0,02 0,01 Z thJHS 0,0001 0,00001 0,0001 010417 SKiM 250GD128D.xls - 14 t doff t don SKiM 250GD128D.xls - 180 D=0,5 0,2 0,1 0,05 0,02 0,01 single pulse 0,001 0,01 0 125 ° 600 200 A C ind. load ...

Page 5

... Mechanical Data Symbol Conditions M to heatsink, SI Units 1 to heatsink, US Units M for terminals, SI Units 2 for terminals, US Units a w This is an electrostatic discharge sensitive device (ESDS). Please observe the international standard IEC 747-1, Chapter IX. © by SEMIKRON Values min. typ. max. (M5) 2 – – 26 (M6) 4 – ...

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