CM600DU-5F Powerex Inc, CM600DU-5F Datasheet - Page 3

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CM600DU-5F

Manufacturer Part Number
CM600DU-5F
Description
IGBT Module
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM600DU-5F

Power Dissipation Pd
1.1kW
Collector Emitter Voltage V(br)ceo
250V
Continuous Collector Current Ic
600A
Collector Emitter Saturation Voltage Vce(sat)
1.7V
Current Rating
600A
Leaded Process Compatible
Yes
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
250V
Vce(on) (max) @ Vge, Ic
1.7V @ 10V, 600A
Current - Collector (ic) (max)
600A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
170nF @ 10V
Power - Max
1100W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM600DU-5F
Manufacturer:
MIT
Quantity:
20 000
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600DU-5F
Dual IGBTMOD™ F-Series Module
600 Amperes/250 Volts
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Thermal Resistance, Junction to Case
1200
900
600
300
10
0
8
6
4
2
0
0
0
SATURATION VOLTAGE CHARACTERISTICS
V
T
COLLECTOR-EMITTER VOLTAGE, V
GE
j
= 25 C
GATE-EMITTER VOLTAGE, V
= 15V
10
OUTPUT CHARACTERISTICS
8
1
4
COLLECTOR-EMITTER
(TYPICAL)
(TYPICAL)
2
8
I
I
C
C
6.5
= 1200A
= 240A
12
3
GE
, (VOLTS)
CE
T
I
j
16
, (VOLTS)
C
4
= 25
6.25
= 600A
5.75
5.25
5.5
6
5
o
C
20
5
R
R
R
Symbol
R
th(j-c')
th(j-c)
th(j-c)
th(c-f)
1200
900
600
300
10
10
10
10
0
Q
R
Q
4
3
2
1
0.6
0
T
V
j
EMITTER-COLLECTOR VOLTAGE, V
j
CE
= 25 C
= 25 C unless otherwise specified
GATE-EMITTER VOLTAGE, V
0.8
Per Module, Thermal Grease Applied
TRANSFER CHARACTERISTICS
= 10V
FORWARD CHARACTERISTICS
T
T
2
j
j
T
= 25 C
= 125 C
C
FREE-WHEEL DIODE
1.0
Reference Point Under Chip
Per FWDi 1/2 Module
Per IGBT 1/2 Module
Per IGBT 1/2 Module
4
(TYPICAL)
(TYPICAL)
1.2
Test Conditions
6
1.4
GE
, (VOLTS)
EC
, (VOLTS)
8
1.6
1.8
10
10
10
10
10
2.0
1.6
1.2
0.8
0.4
0
3
2
1
0
10
Min.
SATURATION VOLTAGE CHARACTERISTICS
0
-1
V
V
f = 1MHz
COLLECTOR-EMITTER VOLTAGE, V
GE
GE
COLLECTOR-CURRENT, I
= 15V
= 0V
T
T
j
j
= 25 C
= 125 C
CAPACITANCE VS. V
COLLECTOR-EMITTER
400
10
Typ.
0.020
0
(TYPICAL)
(TYPICAL)
Max.
C
800
, (AMPERES)
10
0.11
0.20
0.05
1
CE
CE
, (VOLTS)
C
C
C
ies
oes
res
Units
C/W
C/W
C/W
C/W
1200
10
2
3
3

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