2N5115 Vishay, 2N5115 Datasheet

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2N5115

Manufacturer Part Number
2N5115
Description
Transistor
Manufacturer
Vishay
Datasheets

Specifications of 2N5115

Breakdown Voltage Vbr
30V
Gate-source Cutoff Voltage Vgs(off) Max
6V
Continuous Drain Current Id
-60mA
Gate-source Breakdown Voltage
30V
Mounting Type
Through Hole
Zero Gate Voltage Drain Current Idss Min
-15mA
Current Rating
-50mA
Gate-source Cutoff Voltage
6V
Rohs Compliant
No
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N5115
Manufacturer:
VISHAY
Quantity:
343
Part Number:
2N5115
Manufacturer:
OMRON
Quantity:
23
Part Number:
2N5115
Manufacturer:
SI
Quantity:
20 000
The 2N5114 series consists of p-channel JFET analog
switches designed to provide low on-resistance, good
off-isolation, and fast switching. These JFETs are optimized
for use in complementary switching applications with the
Vishay Siliconix 2N4856A series.
Gate-Drain Voltage
Gate-Source Voltage
Gate Current
Storage Temperature
Operating Junction Temperature
For applications information see AN104.
Document Number: 70260
S-04030—Rev. E, 04-Jun-01
D Low On-Resistance: 2N5114 <75 W
D Fast Switching—t
D High Off-Isolation—I
D Low Capacitance: 6 pF
D Low Insertion Loss
Part Number
2N5114
2N5115
2N5116
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
ON
GS(off)
: 16 ns
D(off)
5 to 10
3 to 6
1 to 4
. . . . . . . . . . . . . . . . . . . . . . . . . .
: –10 pA
(V)
r
DS(on)
100
150
75
Max (W)
Case
P-Channel JFETs
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response
D Eliminates Additional Buffering
–65 to 200_C
–55 to 200_C
G
S
–50 mA
1
2
30 V
30 V
TO-206AA
I
D(off)
Top View
(TO-18)
Typ (pA)
–10
–10
–10
3
The 2N5114 series is available with JAN, JANTX, or JANTXV
level processing, (see 2N5114 JAN series data sheet).
Lead Temperature (
Power Dissipation
Notes
a.
D
Derate 3 mW/_C above 25_C
t
ON
Max (ns)
a
16
30
42
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
/
16
” from case for 10 sec.)
2N5114/5115/5116
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
Vishay Siliconix
. . . . . . . . . . . . . . . . . . .
www.vishay.com
500 mW
300_C
9-1

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2N5115 Summary of contents

Page 1

... Part Number V (V) GS(off) 2N5114 2N5115 2N5116 Low On-Resistance: 2N5114 < Fast Switching— High Off-Isolation—I : –10 pA D(off) D Low Capacitance Low Insertion Loss The 2N5114 series consists of p-channel JFET analog switches designed to provide low on-resistance, good off-isolation, and fast switching. These JFETs are optimized for use in complementary switching applications with the Vishay Siliconix 2N4856A series ...

Page 2

... kHz – MHz MHz MHz kHz See Switching Circuit Limits 2N5114 2N5115 2N5116 Min Max Min Max Min Max –30 –90 –15 –60 –5 –25 500 500 500 –500 –500 –500 –1 –1 –1 –1.3 –0.8 –0.6 75 100 150 –1 – ...

Page 3

... Forward Transconductance and Output Conductance –100 18 I DSS –80 15 –60 12 –40 9 – 300 240 180 120 60 0 –100 – – 2N5114/5115/5116 Vishay Siliconix vs. Gate-Source Cutoff Voltage g and – kHz – Gate-Source Cutoff Voltage (V) GS(off) On-Resistance vs. Temperature I = – changes X 0.7%/ 1.5 V GS(off –35 – ...

Page 4

... Vishay Siliconix Output Characteristics – 1.5 V 0.5 V –1.6 1.0 V –1.2 –0.8 –0 –0.1 –0.2 –0.3 V – Drain-Source Voltage (V) DS Output Characteristics – GS(off) –20 –15 –10 – –4 –8 –12 V – Drain-Source Voltage (V) DS Capacitance vs. Gate-Source Voltage MHz iss 12 C rss ...

Page 5

... V – Gate-Source Voltage (V) GS Transfer Characteristics – GS(off) –64 – –55_C A 25_C –32 –16 125_C – Gate-Source Voltage (V) GS 2N5114 2N5115 V –10 V – 430 W 910 100 W 220 –15 mA –7 mA D(on GS(H) V –11 V –7 V GS(L) *Non-inductive ...

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