BUZ901P SEMELAB, BUZ901P Datasheet

N CHANNEL MOSFET, 200V, 8A, TO-247

BUZ901P

Manufacturer Part Number
BUZ901P
Description
N CHANNEL MOSFET, 200V, 8A, TO-247
Manufacturer
SEMELAB
Datasheet

Specifications of BUZ901P

Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
1.5ohm
Threshold Voltage Vgs Typ
1.5V
Power Dissipation Pd
125W
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUZ901P
Manufacturer:
VISHAY
Quantity:
6 000
Part Number:
BUZ901P
Manufacturer:
ST
0
MAGNA
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
V
V
I
I
P
T
T
R
Magnatec.
TEC
D
D(PK)
stg
j
DSX
GSS
D
case
JC
Pin 1 – Gate
= 25°C unless otherwise stated)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
Pin 2 – Source
TO–247
1.01 (0.040)
1.40 (0.055)
1
15.49 (0.610)
16.26 (0.640)
5.25 (0.215)
2
B S C
Pin 3 – Drain
3
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
3.55 (0.140)
3.81 (0.150)
@ T
case
= 25°C
FEATURES
• HIGH SPEED SWITCHING
• N–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• P–CHANNEL ALSO AVAILABLE AS
BUZ905P & BUZ906P
POWER MOSFETS FOR
AUDIO APPLICATIONS
POWER MOSFET
N–CHANNEL
BUZ900P
160V
–55 to 150°C
1.0°C/W
150°C
125W
±14V
8A
8A
BUZ900P
BUZ901P
BUZ901P
200V
Prelim. 10/94

Related parts for BUZ901P

BUZ901P Summary of contents

Page 1

... INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS Pin 3 – Drain BUZ905P & BUZ906P @ T = 25°C case BUZ900P BUZ901P N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS BUZ900P BUZ901P 160V 200V ±14V 8A 8A 125W –55 to 150°C 150°C 1.0°C/W Prelim. 10/94 ...

Page 2

... Test Conditions V = 10V 1MHz V = 20V 2%. Derating Chart 150 125 100 100 T — CASE TEMPERATURE (˚C) C BUZ900P BUZ901P Min. Typ. 160 200 = ±100 A ±14 = 100mA 0.15 =8A = 160V = 200V = 3A 0.7 Min. Typ. 500 300 10 100 50 125 150 Max. Unit ...

Page 3

... Gate – Source Voltage — GATE – SOURCE VOLTAGE (V) GS Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612 25˚ 25˚C C BUZ900 BUZ901 100 1000 T = 25˚ BUZ900P BUZ901P Typical Output Characteristics — DRAIN – SOURCE VOLTAGE (V) DS Transconductance 100 V = 20V 25˚ 75˚ 0 ...

Page 4

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