IRF620PBF Vishay, IRF620PBF Datasheet

N CHANNEL MOSFET, 200V, 5.2A TO-220

IRF620PBF

Manufacturer Part Number
IRF620PBF
Description
N CHANNEL MOSFET, 200V, 5.2A TO-220
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRF620PBF

Transistor Polarity
N Channel
Continuous Drain Current Id
5.2A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
800mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
5.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
260pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.8 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.2 A
Power Dissipation
50000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.8Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF620PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF620PBF
Manufacturer:
VISHAY
Quantity:
220
Company:
Part Number:
IRF620PBF
Quantity:
5 000
Company:
Part Number:
IRF620PBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91027
S11-0510-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 5.2 A, dI/dt  95 A/μs, V
= 50 V, starting T
()
TO-220AB
G
a
D
J
S
= 25 °C, L = 6.1 mH, R
c
a
a
DD
b
V
 V
GS
= 10 V
DS
G
, T
N-Channel MOSFET
J
 150 °C.
Single
200
3.0
7.9
14
This datasheet is subject to change without notice.
g
= 25 , I
D
S
C
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.80
GS
AS
6-32 or M3 screw
at 10 V
= 5.2 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220AB
IRF620PbF
SiHF620-E3
IRF620
SiHF620
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
DM
I
AR
DS
GS
AR
D
AS
D
stg
design,
- 55 to + 150
IRF620, SiHF620
LIMIT
300
± 20
0.40
200
110
5.2
3.3
5.2
5.0
5.0
1.1
18
50
10
low
www.vishay.com/doc?91000
d
Vishay Siliconix
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRF620PBF Summary of contents

Page 1

... The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance S and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF620PbF SiHF620-E3 IRF620 SiHF620 = 25 °C, unless otherwise noted) C SYMBOL ° ...

Page 2

... IRF620, SiHF620 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Fig Typical Transfer Characteristics C 3 2.5 2.0 4.5 V 1.5 1.0 0.5 150 ° 91027_04 = 150 °C C Fig Normalized On-Resistance vs. Temperature This datasheet is subject to change without notice. IRF620, SiHF620 Vishay Siliconix ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( 4 ...

Page 4

... IRF620, SiHF620 Vishay Siliconix 750 MHz iss rss gd 600 oss ds gd 450 C iss 300 C oss 150 C rss Drain-to-Source Voltage ( 91027_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 4 100 Total Gate Charge (nC) 91027_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 5

... Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms 0 Rectangular Pulse Duration ( Fig. 12b - Unclamped Inductive Waveforms This datasheet is subject to change without notice. IRF620, SiHF620 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 d(on) r d(off ...

Page 6

... IRF620, SiHF620 Vishay Siliconix 91027_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 300 Top 2.3 A 250 3.3 A Bottom 5.2 A 200 ...

Page 7

... V for logic level devices GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91027. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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