IRFBE20PBF Vishay, IRFBE20PBF Datasheet

N CHANNEL MOSFET, 800V, 1.8A TO-220

IRFBE20PBF

Manufacturer Part Number
IRFBE20PBF
Description
N CHANNEL MOSFET, 800V, 1.8A TO-220
Manufacturer
Vishay
Datasheets

Specifications of IRFBE20PBF

Transistor Polarity
N Channel
Continuous Drain Current Id
1.8A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
6.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.5 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
530pF @ 25V
Power - Max
54W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
6.5 Ohm @ 10 V
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
54000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
27 ns
Rise Time
17 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFBE20PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFBE20PBF
Manufacturer:
IR
Quantity:
160
Part Number:
IRFBE20PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRFBE20PBF
Quantity:
15 900
Company:
Part Number:
IRFBE20PBF
Quantity:
70 000
Company:
Part Number:
IRFBE20PBF
Quantity:
10 000
Lead-Free
Document Number: 91117
www.vishay.com
1

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IRFBE20PBF Summary of contents

Page 1

... Lead-Free Document Number: 91117 www.vishay.com 1 ...

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... Document Number: 91117 www.vishay.com 2 ...

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... Document Number: 91117 www.vishay.com 3 ...

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... Document Number: 91117 www.vishay.com 4 ...

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... Document Number: 91117 www.vishay.com 5 ...

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... Document Number: 91117 www.vishay.com 6 ...

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... Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent GS Document Number: 91117 + • • • • G • SD • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ =10V www.vishay.com 7 ...

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... LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.104) PAR DAT E CODE 1997 INE C TAC Fax: (310) 252-7903 08/04 www.vishay.com 8 ...

Page 9

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

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