IRLU9343PBF International Rectifier, IRLU9343PBF Datasheet

P CHANNEL MOSFET, -55V, 20A, IPAK

IRLU9343PBF

Manufacturer Part Number
IRLU9343PBF
Description
P CHANNEL MOSFET, -55V, 20A, IPAK
Manufacturer
International Rectifier
Datasheet

Specifications of IRLU9343PBF

Transistor Polarity
P Channel
Continuous Drain Current Id
-20A
Drain Source Voltage Vds
-55V
On Resistance Rds(on)
105mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLU9343PBF
Manufacturer:
IR
Quantity:
3 000
Features
l
l
l
l
l
l
l
Description
This Digital Audio HEXFET
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Notes  through … are on page 7
www.irf.com
Absolute Maximum Ratings
V
V
I
I
I
P
P
T
T
Thermal Resistance
R
R
Amplifier Applications
D
D
DM
175°C Operating Junction Temperature for
Repetitive Avalanche Capability for Robustness and
Key Parameters Optimized for Class-D Audio
Low R
Low Q
Low Q
Efficiency
Ruggedness
Reliability
J
STG
Advanced Process Technology
DS
GS
D
D
θJC
θJA
@ T
@ T
@T
@T
C
C
C
C
DSON
g
rr
= 25°C
= 100°C
= 25°C
= 100°C
and Q
for Better THD and Lower EMI
for Improved Efficiency
sw
for Better THD and Improved
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient
®
is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
f
Parameter
Parameter
c
f
GS
GS
@ -10V
@ -10V
V
R
R
Q
T
J
DS
DS(ON)
DS(ON)
g
G
max
typ.
typ. @ V
typ. @ V
Key Parameters
Typ.
D
S
–––
–––
GS
GS
= -10V
= -4.5V
-40 to + 175
10 (1.1)
Max.
0.26
-55
±20
-14
-10
-60
33
20
IRLIB9343
TO-220 Full-Pak
Max.
3.84
65
150
175
-55
93
31
lbf
Units
y
Units
W/°C
°C/W
in (N
°C
W
m:
m:
V
A
nC
°C
V
y
m)
1
4/1/04

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IRLU9343PBF Summary of contents

Page 1

Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio l Amplifier Applications Low R for Improved Efficiency l DSON Low Q and Q for Better THD and Improved Efficiency Low Q for Better THD and ...

Page 2

Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

Page 3

TOP 10 BOTTOM 1 -2.5V ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 25° 175°C 10.0 1.0 V ...

Page 4

175°C 10 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

125°C 100 25°C 0 4.0 6.0 8 Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage 1000 Duty Cycle = Single Pulse 100 0.01 10 0.05 ...

Page 6

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 16 D.U DRIVER -20V GS 0.01 Ω DUT 0 ...

Page 7

TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) 10.60 (.417) 10.40 (.409) 16.00 (.630) 15.80 (.622 13.70 (.540) 13.50 (.530) 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X TO-220 Full-Pak Part Marking Information Notes : T ...

Page 8

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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