SI7898DP Vishay, SI7898DP Datasheet

N CH MOSFET

SI7898DP

Manufacturer Part Number
SI7898DP
Description
N CH MOSFET
Manufacturer
Vishay
Datasheet

Specifications of SI7898DP

Transistor Polarity
N Channel
Continuous Drain Current Id
4.8A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
85mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Power Dissipation Pd
5W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7898DP-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
31 602
Part Number:
SI7898DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7898DP-T1-E3
Quantity:
9 000
Part Number:
SI7898DP-T1-GE3
Manufacturer:
NXP
Quantity:
20
Part Number:
SI7898DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7898DP-T1-GE3
0
Company:
Part Number:
SI7898DP-T1-GE3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71873
S09-0227-Rev. D, 09-Feb-09
Ordering Information: Si7898DP-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
150
(V)
8
6.15 mm
D
7
D
6
D
PowerP AK SO-8
Bottom V iew
Si7898DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
5
0.095 at V
0.085 at V
D
R
DS(on)
1
J
a
S
= 150 °C)
GS
a
GS
2
(Ω)
= 6.0 V
= 10 V
S
N-Channel 150-V (D-S) MOSFET
3
S
a
5.15 mm
4
G
a
b,c
A
I
= 25 °C, unless otherwise noted
D
4.8
4.5
Steady State
Steady State
(A)
T
T
L = 0.1 mH
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Low Thermal Resistance PowerPAK
• PWM Optimized
• DC/DC Power Supply Primary Side Switch
Symbol
Symbol
T
R
R
Available
for Fast Switching
Package with Low 1.07 mm Profile
100 % R
Industrial Motor Drives
J
V
V
I
I
P
, T
I
DM
thJA
thJC
AS
I
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFETs
Typical
10 s
4.8
3.8
4.1
5.0
3.2
2.1
20
52
- 55 to 150
± 20
150
260
25
10
G
Steady State
N-Channel MOSFET
Maximum
3.0
2.4
1.6
1.9
1.2
2.6
25
65
Vishay Siliconix
D
S
Si7898DP
www.vishay.com
®
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI7898DP

SI7898DP Summary of contents

Page 1

... Bottom V iew Ordering Information: Si7898DP-T1-E3 (Lead (Pb)-free) Si7898DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7898DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71873 S09-0227-Rev. D, 09-Feb-09 1200 0.25 0.20 0.15 0. °C J 0.05 0.00 0.8 1.0 1.2 Si7898DP Vishay Siliconix C iss 900 600 300 C rss C oss Drain-to-Source Voltage (V) DS Capacitance 3 3 2.5 2.0 1.5 1.0 ...

Page 4

... Si7898DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 0.5 0.0 - 0.5 - 1 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 μ 100 125 150 100 Limited on °C C 0.1 Single Pulse ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71873. Document Number: 71873 S09-0227-Rev. D, 09-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7898DP Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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