IRFF210 International Rectifier, IRFF210 Datasheet - Page 2

• Manufacturer Part Number: IRFF210
• Description: N CH MOSFET, 200V, 2.25A, TO-205AF
• Manufacturer: International Rectifier

Specifications of IRFF210

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.25A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics
Thermal Resistance
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
IRFF210
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
L S + L D
C iss
C oss
C rss
R thJC
R thJA
t f
I S
I SM
V SD
t rr
Q RR
t o n
BV DSS / T J
(off)
(on)
2
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction-to-Case
Junction-to-Ambient
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
@ Tj = 25°C (Unless Otherwise Specified)
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
Min Typ Max Units
—
—
Min Typ Max Units
—
—
—
—
—
Min
200
2.0
0.9
4.3
0.7
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.25
Typ Max Units
140
175
7.0
8.6
8.3
—
5 5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.25
350
9.0
1.5
3.0
1.725
-100
°C/W
250
100
1.5
4.0
6.2
1.2
5.0
—
—
—
2 5
1 5
2 0
3 0
2 0
—
—
—
nS
µC
V
A
S ( )
V/°C
nH
µA
nA
nC
n s
pF
V
V
T j = 25°C, I F = 2.25A, di/dt
T
j
Typical socket mount.
= 25°C, I S =2.25A, V GS = 0V
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Reference to 25°C, I D = 1.0mA
V GS =10V, I D = 2.25A
V DS = V GS , I D = 250 A
V GS = 10V, I D = 1.50A
V DS > 15V, I DS = 1.50A
V DD = 100V, I D = 2.25A,
Test Conditions
Test Conditions
V GS = 0V, I D = 1.0mA
V GS =10V, ID = 2.25A
V GS = 0V, T J = 125°C
V GS = 0V, V DS = 25V
V DS = 160V, V GS =0V
Test Conditions
V DD
V DS = 160V
V GS = 20V
f = 1.0MHz
V GS = -20V
V DS =100V
R G = 7.5
50V
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100A/ s