SUB85N10-10-E3 Vishay, SUB85N10-10-E3 Datasheet

N CH MOSFET, 100V, 85A, TO-220AB

SUB85N10-10-E3

Manufacturer Part Number
SUB85N10-10-E3
Description
N CH MOSFET, 100V, 85A, TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of SUB85N10-10-E3

Transistor Polarity
N Channel
Continuous Drain Current Id
85A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
12mohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
250W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUB85N10-10-E3
Manufacturer:
INFINEON
Quantity:
2 000
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve fo voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Document Number: 71141
S10-0107-Rev. E, 18-Jan-10
ORDERING INFORMATION
Package
TO-220AB
TO-263
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
PRODUCT SUMMARY
V
DS
100
(V)
SUP85N10-10
TO-220AB
Top View
G D S
0.0105 at V
0.012 at V
R
DS(on)
DRAIN connected to TAB
N-Channel 100-V (D-S) 175 °C MOSFET
J
b
= 150 °C)
b
GS
GS
(Ω)
= 4.5 V
= 10 V
T
C
= 25 °C (TO-220AB and TO-263)
T
A
A
= 25 °C (TO-263)
= 25 °C, unless otherwise noted
I
D
85
T
L = 0.1 mH
T
C
(A)
C
a
= 125 °C
= 25 °C
PCB Mount (TO-263)
Free Air (TO-220AB)
SUB85N10-10
G
Top View
TO-263
D
d
FEATURES
S
• TrenchFET
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
SUP85N10-10, SUB85N10-10
d
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
AS
DS
GS
D
AS
D
stg
®
Symbol
Power MOSFET
R
R
thJA
thJC
SUP85N10-10-E3
SUB85N10-10-E3
Lead (Pb)-free
- 55 to 175
G
Limit
± 20
250
3.75
100
240
280
85
60
75
N-Channel MOSFET
a
a
Limit
c
62.5
0.6
40
Vishay Siliconix
D
S
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SUB85N10-10-E3 Summary of contents

Page 1

... A Symbol ° 125 ° 0 °C (TO-220AB and TO-263 °C (TO-263 PCB Mount (TO-263) Free Air (TO-220AB) Vishay Siliconix ® Power MOSFET N-Channel MOSFET Lead (Pb)-free SUP85N10-10-E3 SUB85N10-10-E3 Limit V 100 DS V ± 240 280 AS c 250 175 ...

Page 2

... SUP85N10-10, SUB85N10-10 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... Drain Current (A) D Transconductance 10 000 8000 C iss 6000 4000 2000 C rss C oss Drain-to-Source Voltage (V) DS Capacitance Document Number: 71141 S10-0107-Rev. E, 18-Jan-10 SUP85N10-10, SUB85N10- °C, unless otherwise noted 0.020 °C C 0.015 25 °C 125 °C 0.010 0.005 0.000 60 80 100 Vishay Siliconix 200 ...

Page 4

... SUP85N10-10, SUB85N10-10 Vishay Siliconix TYPICAL CHARACTERISTICS T 2 2.0 1.5 1.0 0.5 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 ( 150 ° 0.1 0.00001 0.0001 0.001 t (s) in Avalanche Current vs. Time www.vishay.com °C, unless otherwise noted A 75 100 125 150 175 ( °C A 0.01 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71141. Document Number: 71141 S10-0107-Rev. E, 18-Jan-10 SUP85N10-10, SUB85N10-10 1000 100 125 150 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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