IRF7604PBF International Rectifier, IRF7604PBF Datasheet

MOSFET, P, MICRO-8

IRF7604PBF

Manufacturer Part Number
IRF7604PBF
Description
MOSFET, P, MICRO-8
Manufacturer
International Rectifier
Datasheet

Specifications of IRF7604PBF

Transistor Polarity
P Channel
Continuous Drain Current Id
3.6A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
90mohm
Rds(on) Test Voltage Vgs
-4.5V
Voltage Vgs Max
-12V
Operating Temperature Range
-55°C
Threshold Voltage Vgs Typ
-4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Quantity
Price
Company:
Part Number:
IRF7604PBF
Quantity:
10 420
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Thermal Resistance
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
I
I
I
P
V
dv/dt
T
R
D
D
DM
J,
D
GS
@ T
@ T
JA
Generation V Technology
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
T
@T
STG
A
A
A
= 25°C
= 70°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
@ -4.5V
@ -4.5V
G
S
S
S
1
2
3
4
T o p V ie w
Typ.
–––
8
7
6
5
-55 to + 150
HEXFET
Max.
-5.0
-3.6
-2.9
± 12
D
D
D
D
-19
1.8
14
A
M icro 8
®
Max.
R
IRF7604
70
Power MOSFET
DS(on)
V
DSS
PD - 9.1263E
= -20V
= 0.09
Units
mW/°C
°C/W
Units
V/ns
°C
V
A
W
12/9/97

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IRF7604PBF Summary of contents

Page 1

... Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRF7604 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2. BOTTOM - 1.5V 1 0.1 -1 .5V 20µ 25°C ...

Page 4

IRF7604 1200 iss rss gd 1000 oss 800 C ...

Page 5

Charge Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. -3mA Current Sampling ...

Page 6

IRF7604 D.U Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** Peak Diode Recovery dv/dt ...

Page 7

Package Outline Micro8 Outline Dimensions are shown in millimeters (inches 0 ...

Page 8

IRF7604 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches ...

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