IRF7604PBF International Rectifier, IRF7604PBF Datasheet

IRF7604PBF

Manufacturer Part Number

IRF7604PBF

Description

MOSFET, P, MICRO-8

Manufacturer

International Rectifier

Datasheet

1.IRF7604PBF.pdf (8 pages)

Specifications of IRF7604PBF

Transistor Polarity

P Channel

Continuous Drain Current Id

3.6A

Drain Source Voltage Vds

20V

On Resistance Rds(on)

90mohm

Rds(on) Test Voltage Vgs

-4.5V

Voltage Vgs Max

-12V

Operating Temperature Range

-55Â°C

Threshold Voltage Vgs Typ

-4.5V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

IRF7604PBF

Quantity:

10 420

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Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The new Micro8 package, with half the footprint area of the

standard SO-8, provides the smallest footprint available in

an SOIC outline. This makes the Micro8 an ideal device for

applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro8 will allow

it to fit easily into extremely thin application environments

such as portable electronics and PCMCIA cards.

Absolute Maximum Ratings

Thermal Resistance

All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective

only for product marked with Date Code 505 or later .

dv/dt

@ T

Generation V Technology

Ultra Low On-Resistance

P-Channel MOSFET

Very Small SOIC Package

Low Profile (<1.1mm)

Available in Tape & Reel

Fast Switching

STG

= 25°C

= 70°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Parameter

@ -4.5V

T o p V ie w

Typ.

–––

-55 to + 150

HEXFET

Max.

-5.0

-3.6

-2.9

± 12

-19

1.8

M icro 8

Max.

IRF7604

Power MOSFET

DS(on)

DSS

PD - 9.1263E

= -20V

= 0.09

Units

mW/°C

°C/W

Units

V/ns

°C

12/9/97

Related parts for IRF7604PBF

IRF7604PBF Summary of contents

Page 1

... Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRF7604 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF7604PBF datasheet download

IRF7604PBF International Rectifier, IRF7604PBF Datasheet

IRF7604PBF

Specifications of IRF7604PBF

Available stocks

Related parts for IRF7604PBF

IRF7604PBF Summary of contents

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