NTE2903 NTE ELECTRONICS, NTE2903 Datasheet

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NTE2903

Manufacturer Part Number
NTE2903
Description
MOSFET N-CHANNEL SWITCH
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE2903

Rohs Compliant
YES
Features:
D Low Drain-Source ON Resistance: R
D High Forward Transfer Admittance: |y
D Low Leakage Current: I
D Enhancement Mode: V
Absolute Maximum Ratings: (T
Drain-Source Voltage, V
Drain-Gate Voltage (R
Gate-Source Voltage, V
Drain Current (Note 2), I
Drain Power Dissipation (T
Single Pulse Avalanche Energy (Note 3), E
Avalanche Current, I
Repetitive Avalanche Energy (Note 4), E
Channel Temperature, T
Storage Temperature Range, T
Thermal Resistance, Channel-to-Case, R
Thermal Resistance, Channel-to-Ambient, R
Note 1. This transistor is an electrostatic-sensitive device. Please handle with caution. Using con‐
Note 2. Ensure that the channel temperature does not exceed +150°C.
Note 3. V
Note 4. Repetitive rating: pulse width limited by maximum channel temperature.
Continuous
Pulsed (t = 1ms)
tinuously under heavy loads (e.g. the application of high temperature/current/voltage and
the significant change in temperature, etc.) may cause this product to decrease in the reliabil‐
ity significantly even if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the “Absolute maximum Ratings”.
DD
= 90V, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AR
CH
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GSS
D
CH
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DSS
= +25°C (initial), L = 12.2mH, I
= 20kΩ), V
C
th
DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C), P
= 2.0 to 4.0V (V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
N-Ch, Enhancement Mode
stg
= 100μA (V
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
= +25°C unless otherwise specified)
DGR
D
AR
DS(ON)
fs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thCHC
NTE2903
MOSFET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
| = 3.5S Typ
AS
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DS
thCHA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 500V)
= 10V, I
= 1.35Ω Typ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AR
D
= 1mA)
= 5A, R
G
= 25Ω.
-55° to +150°C
3.57°C/W
62.5°C/W
+150°C
180mJ
3.5mJ
500V
500V
±30V
35W
20A
5A
5A

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NTE2903 Summary of contents

Page 1

... Ratings”. Note 2. Ensure that the channel temperature does not exceed +150°C. Note 90V +25°C (initial 12.2mH Note 4. Repetitive rating: pulse width limited by maximum channel temperature. NTE2903 MOSFET N-Ch, Enhancement Mode High Speed Switch = 1.35Ω Typ DS(ON 3.5S Typ fs = 100μ ...

Page 2

Electrical Characteristics: (T Parameter Gate Leakage Current Gate-Source Breakdown Voltage Drain Cut-Off Current Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source ON Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capaticance Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 3

Max .126 (3.2) Dia Max Isol .252 (6.4) .622 (15.0) Max G .118 (3.0) Max .531 (13.5) Min .098 (2.5) .405 (10.3) Max D S .100 (2.54) ...

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