NTE2904 NTE ELECTRONICS, NTE2904 Datasheet

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NTE2904

Manufacturer Part Number
NTE2904
Description
MOSFET N-CHANNEL POWER
Manufacturer
NTE ELECTRONICS
Datasheet
Features:
D Advanced Process Technology
D Ultra Low On-Resistance
D Dynamic dv/dt Rating
D +175°C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
Absolute Maximum Ratings:
Continuous Drain Current (V
Pulsed Drain Current (Note 1), I
Power Dissipation (T
Gate-to-Source Voltage, V
Avalanche Current (Note 1), I
Repetitive Avalanche Energy (Note 1), E
Peak Diode Recovery dv/dt (Note 3), dv/dt
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1.6mm from case for 10sec), T
Mounting Torque (6-32 or M3 Screw)
Thermal Resistance, Junction-to-Case, R
Thermal Resistance, Junction-to-Ambient, R
Typical Thermal Resistance, Case-to-Sink (Flat, Greased Surface), R
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. Starting T
Note 3. I
T
T
Derate Linearly Above 25°C
C
C
SD
= +25°C
= +100°C
≤ 32A, di/dt ≤ 220A/μs, V
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C, L = 0.37mH, R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= +25°C), P
GS
GS
AR
N-Ch, Enhancement Mode
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10V), I
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
AR
≤ V
J
thJC
NTE2904
MOSFET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)DSS
G
thJA
= 25Ω, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, T
J
AS
≤ +175°C
= 32A
L
thCS
. . . . . . . . . . . . . . . . .
. . . . . . . . . . . .
10 lbfin (1.1Nm)
-55° to +175°C
-55° to +175°C
0.83W/°C
1.15°C/W
0.5°C/W
62°C/W
5.0V/ns
+300°C
7130W
13mJ
210A
±20V
64A
45A
32A

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NTE2904 Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case, R Thermal Resistance, Junction-to-Ambient, R Typical Thermal Resistance, Case-to-Sink (Flat, Greased Surface), R Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. Starting T = +25° 0.37mH ≤ 32A, di/dt ≤ 220A/μs, V Note NTE2904 MOSFET N-Ch, Enhancement Mode High Speed Switch = 10V ...

Page 2

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay ...

Page 3

Dia Max .070 (1.78) Max Gate .100 (2.54) .420 (10.67) Max .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Source Drain/Tab ...

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