NTE2905 NTE ELECTRONICS, NTE2905 Datasheet
NTE2905
Manufacturer Part Number
NTE2905
Description
MOSFET P-CHANNEL POWER
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2905.pdf
(3 pages)
Specifications of NTE2905
Rohs Compliant
YES
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D P−Channel
D Isolated Central Mounting Hole
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Continuous Drain Current (V
Pulsed Drain Current (Note 1), I
Power Dissipation (T
Gate−to−Source Voltage, V
Single Pulse Avalanche Energy (Note 2), E
Avalanche Current (Note 1), I
Repetitive Avalanche Energy (Note 1), E
Peak Diode Recovery dv/dt (Note 3), dv/dt
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1.6mm from case for 10sec), T
Mounting Torque (6−32 or M3 Screw)
Thermal Resistance, Junction−to−Case, R
Thermal Resistance, Junction−to−Ambient, R
Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), R
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. Starting T
Note 3. I
T
T
Derate Linearly Above 25°C
C
C
SD
= +25°C
= +100°C
≤ 12A, di/dt ≤ 150A/μs, V
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C, L = 8.2mH, R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= +25°C), P
GS
GS
AR
P−Ch, Enhancement Mode
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= −10V), I
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AR
≤ V
D
J
thJC
NTE2905
MOSFET
AS
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)DSS
= 25Ω, I
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, T
AS
J
≤ +150°C
= 12A
L
thCS
. . . . . . . . . . . . . . . . .
. . . . . . . . . . . .
10 lbfin (1.1Nm)
−55° to +150°C
−55° to +150°C
0.1.2W/°C
1.15°C/W
0.5°C/W
62°C/W
5.0V/ns
+300°C
790mJ
−7.5A
150W
15mJ
−12A
−48A
±20V
−12A
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NTE2905 Summary of contents
Page 1
... Thermal Resistance, Junction−to−Ambient, R Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), R Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. Starting T = +25° 8.2mH ≤ 12A, di/dt ≤ 150A/μs, V Note NTE2905 MOSFET P−Ch, Enhancement Mode High Speed Switch = −10V ...
Page 2
Parameter Drain−to−Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain−to−Source On−Resistance Gate Threshold Voltage Forward Transconductance Drain−to−Source Leakage Current Gate−to−Source Forward Leakage Gate−to−Source Reverse Leakage Total Gate Charge Gate−to−Source Charge Gate−to−Drain (“Miller”) Charge Turn−On Delay Time Rise Time Turn−Off Delay ...
Page 3
Dia Max .215 (5.45) Note: Drain connected to metal part of mounting surface. .626 (15.9) Max .157 (4.0) .047 (1. .197 (5.0) See Note .787 (20.0) .559 (14.2) Min .094 (2.4) TO247 ...