SI3457CDV-T1-GE3 Vishay, SI3457CDV-T1-GE3 Datasheet

MOSFET,P CH,30V,5.1A,TSOP6

SI3457CDV-T1-GE3

Manufacturer Part Number
SI3457CDV-T1-GE3
Description
MOSFET,P CH,30V,5.1A,TSOP6
Manufacturer
Vishay
Datasheet

Specifications of SI3457CDV-T1-GE3

Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
60mohm
Rds(on) Test Voltage Vgs
-10V
Voltage Vgs Max
-20V
Operating Temperature Range
-55°C To +150°C
Transistor Case
RoHS Compliant
Transistor Case Style
TSOP
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3457CDV-T1-GE3
Manufacturer:
VISHAY
Quantity:
300
Part Number:
SI3457CDV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI3457CDV-T1-GE3
0
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 68602
S09-0131-Rev. B, 02-Feb-09
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 30
(V)
C
Ordering Information: Si3457CDV-T1-E3 (Lead (Pb)-free)
= 25 °C.
0.113 at V
0.074 at V
3 mm
R
DS(on)
GS
GS
J
(Ω)
= - 4.5 V
= - 10 V
= 150 °C)
b, d
Si3457CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
1
2
3
TSOP-6
2.85 mm
P-Channel 30-V (D-S) MOSFET
I
6
5
4
D
- 5.1
- 4.1
(A)
Steady State
a
T
T
T
T
T
T
T
T
T
T
t ≤ 5 s
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
5.1 nC
g
(Typ.)
New Product
Marking Code
Symbol
AT
R
R
thJA
thJF
Symbol
T
XXX
J
V
V
Part # Code
I
P
, T
DM
I
I
GS
DS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• Load Switch
Available
TrenchFET
Lot Traceability
and Date Code
Typical
55
34
®
Power MOSFET
- 55 to 150
- 1.67
- 4.1
- 3.3
2.0
1.3
Limit
± 20
- 5.1
- 4.1
- 2.5
- 30
- 20
(3) G
3.0
2.0
b, c
b, c
b, c
b, c
b, c
P-Channel MOSFET
Maximum
(1, 2, 5, 6) D
62.5
41
Vishay Siliconix
(4) S
Si3457CDV
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI3457CDV-T1-GE3 Summary of contents

Page 1

... 4 TSOP-6 Top View 2.85 mm Ordering Information: Si3457CDV-T1-E3 (Lead (Pb)-free) Si3457CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si3457CDV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 68602 S09-0131-Rev. B, 02-Feb-09 New Product thru 2.0 2.5 3.0 800 600 400 200 Si3457CDV Vishay Siliconix ° ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.6 ...

Page 4

... Si3457CDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2 250 µA D 2.0 1.8 1.6 1.4 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.25 0.20 0. °C J 0.10 0.05 0.00 1 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68602 S09-0131-Rev. B, 02-Feb-09 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si3457CDV Vishay Siliconix 100 125 T - Case Temperature (°C) C Power, Junction-to-Foot www.vishay.com 150 5 ...

Page 6

... Si3457CDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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