ZVN2110G Diodes Inc, ZVN2110G Datasheet
ZVN2110G
Manufacturer Part Number
ZVN2110G
Description
MOSFET, N, LOGIC, SOT-223
Manufacturer
Diodes Inc
Datasheet
1.ZVN2110G.pdf
(3 pages)
Specifications of ZVN2110G
Transistor Polarity
N Channel
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
100V
On Resistance Rds(on)
4ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature
RoHS Compliant
Threshold Voltage Vgs Typ
2.4V
Rohs Compliant
Yes
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – OCTOBER 1995
FEATURES
*
*
PARTMARKING DETAIL -
COMPLEMENTARY TYPE -
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
DRAIN-SOURCE DIODE CHARACTERISTICS
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
Diode Forward Voltage (1)
Reverse Recovery Time
PARAMETER
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
PARAMETER
6A PULSE DRAIN CURRENT
FAST SWITCHING SPEED
amb
=25°C
ZVN2110
ZVP2110G
amb
V
T
SYMBOL
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
SYMBOL
GSS
DSS
D(on)
d(on)
r
d(off)
f
GS(th)
DS(on)
fs
iss
oss
rss
SD
RR
=25°C
DSS
MIN. TYP. MAX. UNIT
100
0.8
1.5
250
MIN. TYP. MAX. UNIT
3 - 387
amb
0.1
2
350
59
16
4
4
4
8
8
0.82
112
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
stg
2.4
20
100
4
75
25
8
7
8
13
13
1
V
ns
V
V
nA
A
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
CONDITIONS.
CONDITIONS.
I
I
V
V
V
V
V
V
V
V
S
F
D
D
GS
DS
DS
DS
GS
DS
DS
DD
=0.32A, V
=0.32A, V
=1mA, V
=1mA, V
-55 to +150
= 20V, V
=100V, V
=80V, V
=25V, V
=10V, I
=25V, I
=25 V, V
VALUE
25V, I
100
500
ZVN2110G
6
2
20
GS
DS
D
D
D
D
GS
GS
=1A
=1A
GS
=1A
GS
GS
GS
=0V
= V
DS
=0V, T=125°C(2)
=10V
=0V, f=1MHz
=0, I
=0
=0
=0V
GS
R
G
=0.1A
UNIT
mA
°C
W
A
V
V
D
S
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ZVN2110G Summary of contents
Page 1
... DSS 100 2 I 1.5 D(on DS(on) g 250 350 iss oss rss d(on d(off SYMBOL MIN. TYP. MAX. UNIT V 0. 112 387 ZVN2110G D G VALUE UNIT 100 500 -55 to +150 CONDITIONS =1mA =1mA 20V =100V =80V, V =0V, T=125°C( =25V, V =10V =10V, I ...
Page 2
... ZVN2110G TYPICAL CHARACTERISTICS V GS= 10V 2 1.2 6V 0 Drain Source Voltage (Volts) DS Output Characteristics Gate Source Voltage (Volts) GS- Voltage Saturation Characteristics Gate Source Voltage (Volts) GS- On-resistance v gate-source voltage 2.0 1.6 1.2 0.8 0 100 V DS Saturation Characteristics 2.8 2.4 2.0 1 ...
Page 3
... Capacitance v drain-source voltage 500 400 300 V 200 100 0 1 -Gate Source Voltage (Volts) GS Transconductance v gate-source voltage iss oss C rss 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 50 Q-Charge (nC) Gate charge v gate-source voltage 3 - 389 ZVN2110G 25V DS 20V 50V 80V ...