IRF5NJ5305 International Rectifier, IRF5NJ5305 Datasheet

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IRF5NJ5305

Manufacturer Part Number
IRF5NJ5305
Description
TRANSISTOR,MOSFET,P-CHANNEL,55V V(BR)DSS,22A I(D),SMT
Manufacturer
International Rectifier
Datasheet

Specifications of IRF5NJ5305

Rohs Compliant
NO
Product Summary
HEXFET
SURFACE MOUNT (SMD-0.5)
Fifth Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
For footnotes refer to the last page
Absolute Maximum Ratings
* Current is limited by package
I D @ V GS = -10V, T C = 100°C Continuous Drain Current
I D @ V GS = -10V, T C = 25°C
www.irf.com
Part Number
IRF5NJ5305
P D @ T C = 25°C
T STG
dv/dt
V GS
E AS
E AR
I DM
I AR
T J
®
POWER MOSFET
BV DSS
-55V
®
Parameter
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
power MOSFETs from
R
0.065
DS(on)
-22A*
I
D
Features:
n
n
n
n
n
n
n
n
Low R
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
DS(on)
300 (for 5 s)
1.0 (Typical)
-55 to 150
SMD-0.5
±20
160
-16
-88
-16
0.6
7.5
2.8
-22*
75
55V, P-CHANNEL
IRF5NJ5305
PD - 94033
Units
W/°C
V/ns
mJ
mJ
o
A
W
V
A
C
g
11/10/00
1

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IRF5NJ5305 Summary of contents

Page 1

... I DS(on) D 0.065 -22A* Features: n Low R n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight PD - 94033 IRF5NJ5305 55V, P-CHANNEL SMD-0.5 DS(on) Units -22* A -16 - 0.6 W/°C ±20 V 160 mJ -16 A 7.5 mJ 2.8 V/ns -55 to 150 ...

Page 2

... IRF5NJ5305 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse Q g Total Gate Charge ...

Page 3

... TOP BOTTOM 10 1 ° 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 2 1.5 ° 1.0 0.5 = -25V 15 0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF5NJ5305 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V -4.5V  20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS -22A  V = ...

Page 4

... IRF5NJ5305  2500 1MHz iss rss 2000 oss iss 1500  C 1000 oss  500 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100  ° 150 0.1 0.2 0.6 1.0 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 0 Fig 6. Typical Gate Charge Vs. ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com -10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit t d(on 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms  Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF5NJ5305 D.U. µ d(off ...

Page 6

... IRF5NJ5305 -20V -10V 0 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform 6 350 300 250 A 200 150 15V 100 Starting T , Junction Temperature( C) Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit ...

Page 7

... Pulse width 300 s; Duty Cycle IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 011 451 0111 Data and specifications subject to change without notice. 11/00 IRF5NJ5305 -230 A/ s, 150°C 2% PAD ASSIGNMENTS 7 ...

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