IRF840STRRPBF Vishay, IRF840STRRPBF Datasheet
IRF840STRRPBF
Specifications of IRF840STRRPBF
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IRF840STRRPBF Summary of contents
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... I = 8.0 A (see fig. 12 ≤ 150 ° IRF840S, SiHF840S Vishay Siliconix device design, low on-resistance is a surface mount power package is suitable for high current applications 2 D PAK (TO-263 IRF840STRRPbF a a SiHF840STR- IRF840STR a a SiHF840STR SYMBOL LIMIT V 500 DS V ± 8.0 ...
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... IRF840S, SiHF840S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... DS , 91071_02 Fig Typical Output Characteristics, T Document Number: 91071 S-81432-Rev. A, 07-Jul-08 4 µs Pulse Width °C C 91071_03 = 25 ° µs Pulse Width T = 150 °C C 91071_04 = 150 °C C IRF840S, SiHF840S Vishay Siliconix ° 150 ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
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... IRF840S, SiHF840S Vishay Siliconix 2500 MHz iss 2000 rss oss ds 1500 1000 500 Drain-to-Source Voltage ( 91071_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 8 400 250 100 Total Gate Charge (nC) 91071_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss rss 91071_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91071 S-81432-Rev. A, 07-Jul-08 125 150 Single Pulse (Thermal Response 0 Rectangular Pulse Duration (S) 1 IRF840S, SiHF840S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF840S, SiHF840S Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 1200 1000 800 600 400 200 100 Starting T , Junction Temperature (° ...
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... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91071. ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...