IRFM240 International Rectifier, IRFM240 Datasheet

N CH MOSFET, 200V, 18A, TO-254AA

IRFM240

Manufacturer Part Number
IRFM240
Description
N CH MOSFET, 200V, 18A, TO-254AA
Manufacturer
International Rectifier
Type
Power MOSFETr
Datasheet

Specifications of IRFM240

Transistor Polarity
N Channel
Continuous Drain Current Id
18A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
180mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.25Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Continuous Drain Current
18A
Power Dissipation
125W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-254AA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFM240CM
Manufacturer:
TI
Quantity:
460
POWER MOSFET
THRU-HOLE (TO-254AA)
For footnotes refer to the last page
Absolute Maximum Ratings
HEXFET
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance.
transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as
switching power supplies, motor controls, inverters,
choppers, audio amplifiers, high energy pulse circuits, and
virtually any application where high reliability is required.
The
the need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
I D @ V GS = 10V, T C = 100°C Continuous Drain Current
I D @ V GS = 10V, T C = 25°C
www.irf.com
Product Summary
Part Number
IRFM240
HEXFET
P D @ T C = 25°C
®
MOSFET technology is the key to International
T STG
dv/dt
V GS
E AR
E AS
I DM
I AR
T J
transistor’s totally isolated package eliminates
R
0.18 Ω
DS(on)
Parameter
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
18A
I
D
HEXFET
REF:MIL-PRF-19500/596
n
n
n
n
n
n
Features:
HEXFET
Light-weight
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
300 ( 0.063 in.(1.6mm) from case for 10s)
®
MOSFET TECHNOLOGY
9.3 (Typical)
JANTXV2N7219
-55 to 150
200V, N-CHANNEL
JANTX2N7219
12.5
125
±20
450
TO-254AA
1.0
5.0
18
11
72
18
IRFM240
PD - 90555E
Units
W/°C
V/ns
mJ
mJ
o
A
W
V
A
C
g
1

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IRFM240 Summary of contents

Page 1

... HEXFET MOSFET TECHNOLOGY HEXFET Features: Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Dynamic dv/dt Rating n Light-weight n 125 ±20 450 12.5 -55 to 150 300 ( 0.063 in.(1.6mm) from case for 10s) 9.3 (Typical 90555E IRFM240 TO-254AA Units 1.0 W/° 5.0 V/ ...

Page 2

... IRFM240 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse ...

Page 3

... Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com IRFM240 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3 ...

Page 4

... IRFM240 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com ...

Page 5

... Fig 9. Maximum Drain Current Vs. Case Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com ≤ 1 ≤ 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% 10 d(on) r d(off) Fig 10b. Switching Time Waveforms IRFM240 + - ...

Page 6

... IRFM240 D.U 20V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circui Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 15V DRIVER + - (BR)DSS Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. 12V Fig 13b. Gate Charge Test Circuit Vs ...

Page 7

... B A CAUTION Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2007 IRFM240 0.12 [.005] 1.27 [.050] 1.02 [.040] B '#Ãb ""d H6Y 3.81 [.150] PIN ASSIGNMENTS 1 = DRAIN ...

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