IRFM260 International Rectifier, IRFM260 Datasheet

N CH MOSFET, 200V, 35A, TO-254AA

IRFM260

Manufacturer Part Number
IRFM260
Description
N CH MOSFET, 200V, 35A, TO-254AA
Manufacturer
International Rectifier
Datasheet

Specifications of IRFM260

Transistor Polarity
N Channel
Continuous Drain Current Id
35A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
60mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

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Manufacturer
Quantity
Price
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IRFM260
Manufacturer:
IR
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IRFM260
Manufacturer:
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Quantity:
1 350
POWER MOSFET
THRU-HOLE (TO-254AA)
* Current is limited by Package
For footnotes refer to the last page
Absolute Maximum Ratings
HEXFET
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-
established advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are well-
suited for applications such as switching power supplies,
motor controls, inverters, choppers, audio amplifiers,
high energy pulse circuits, and virtually any application
where high reliability is required. The HEXFET
transistor’s totally isolated package eliminates the need
for additional isolating material between the device and
the heatsink. This improves thermal efficiency and
reduces drain capacitance.
I D @ V GS = 10V, T C = 100°C Continuous Drain Current
I D @ V GS = 10V, T C = 25°C
www.irf.com
Product Summary
Part Number
IRFM260
P D @ T C = 25°C
®
MOSFET technology is the key to International
T STG
dv/dt
V GS
E AR
E AS
I DM
I AR
T J
R
0.060 Ω
DS(on)
Parameter
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
35A*
I
D
HEXFET
300 ( 0.063 in.(1.6mm) from case for 10s)
Features:
n
n
n
n
n
n
Light-weight
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
®
MOSFET TECHNOLOGY
9.3 (Typical)
-55 to 150
200V, N-CHANNEL
140
250
±20
700
35*
2.0
4.3
28
35
25
TO-254AA
IRFM260
PD - 91388C
Units
W/°C
V/ns
mJ
mJ
o
A
W
V
A
g
C
1

Related parts for IRFM260

IRFM260 Summary of contents

Page 1

... Peak Diode Recovery dv/dt  Operating Junction T STG Storage Temperature Range Lead Temperature Weight * Current is limited by Package For footnotes refer to the last page www.irf.com IRFM260 200V, N-CHANNEL ® HEXFET MOSFET TECHNOLOGY TO-254AA Features: Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed ...

Page 2

... IRFM260 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse ...

Page 3

... TOP BOTTOM 4.5V 100 100 0.1 Fig 2. Typical Output Characteristics 2 46A D 2.0 1.5 1.0 0.5 = 50V 0 -60 -40 Fig 4. Normalized On-Resistance IRFM260 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 20µs PULSE WIDTH T = 150° Drain-to-Source Voltage ( 10V GS - 100 120 140 160 T , Junction Temperature (° ...

Page 4

... IRFM260 12000 1MHz iss rss gd 10000 oss iss 8000 C oss 6000 4000 C rss 2000 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 T = 150° 25° 0.0 1.0 2 Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 35A D SHORTED ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% A 125 150 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRFM260 + - ≤ 1 ≤ 0 d(off thJC C 0.1 ...

Page 6

... IRFM260 D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circui Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 1600 15V 1200 DRIVER 800 + - 400 0 25 Starting T , Junction Temperature (°C) V (BR)DSS Fig 12c. Maximum Avalanche Energy Same Type as D ...

Page 7

... B A CAUTION Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/2007 IRFM260 0.12 [.005] 1.27 [.050] 1.02 [.040] B 0.84 [.033] MAX. 3.81 [.150] PIN ASSIGNMENTS 1 = DRAIN ...

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