IRFP22N60K Vishay, IRFP22N60K Datasheet

N CHANNEL MOSFET, 600V, 22A, TO-247

IRFP22N60K

Manufacturer Part Number
IRFP22N60K
Description
N CHANNEL MOSFET, 600V, 22A, TO-247
Manufacturer
Vishay
Datasheet

Specifications of IRFP22N60K

Transistor Polarity
N Channel
Continuous Drain Current Id
22A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Configuration
Single
Resistance Drain-source Rds (on)
0.28 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
370 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-247AC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Part Number
Manufacturer
Quantity
Price
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IR
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IR
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12 500
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IR
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Part Number:
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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91208
S-81274-Rev. A, 16-Jun-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 22 A, dI/dt ≤ 360 A/µs, V
(Ω)
TO-247
J
= 25 °C, L = 1.5 mH, R
a
G
D
S
c
a
a
DD
b
V
GS
≤ V
G
= 10 V
= 25 Ω, I
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
600
150
45
76
AS
= 22 A (see fig. 12).
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.24
GS
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247
IRFP22N60KPbF
SiHFP22N60K-E3
IRFP22N60K
SiHFP22N60K
= 100 °C
= 25 °C
FEATURES
• Hard Switching Primary or PFS Switch
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Enhanced Body Diode dV/dt Capability
• Lead (Pb)-free Available
BENEFITS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Motor Drive
Requirement
Ruggedness
and Current
IRFP22N60K, SiHFP22N60K
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
g
Results in Simple Drive
- 55 to + 150
LIMIT
300
± 30
600
380
370
2.9
22
14
88
22
37
15
d
Vishay Siliconix
www.vishay.com
UNIT
W/°C
RoHS*
COMPLIANT
V/ns
mJ
mJ
°C
W
V
A
A
Available
1

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IRFP22N60K Summary of contents

Page 1

... 1.6 mm from case containing terminations are not RoHS compliant, exemptions may apply Document Number: 91208 S-81274-Rev. A, 16-Jun-08 IRFP22N60K, SiHFP22N60K Power MOSFET FEATURES • Hard Switching Primary or PFS Switch 600 • Low Gate Charge Q 0.24 Requirement 150 • Improved Gate, Avalanche and Dynamic dV/dt ...

Page 2

... IRFP22N60K, SiHFP22N60K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... BOTTOM 5.0V 1 20µs PULSE WIDTH Tj = 150°C 0.1 0 Drain-to-Source Voltage (V) Fig Typical Output Characteristics Document Number: 91208 S-81274-Rev. A, 16-Jun-08 IRFP22N60K, SiHFP22N60K 100.00 10.00 1.00 0.10 0.01 10 100 5.0V 10 100 Fig Normalized On-Resistance vs. Temperature Vishay Siliconix 150° 25° 50V 20µ ...

Page 4

... IRFP22N60K, SiHFP22N60K Vishay Siliconix 100000 0V MHZ C iss = SHORTED C rss = C gd 10000 C oss = Ciss 1000 Coss 100 Crss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 22A 480V VDS= 300V 16 VDS= 120V Total Gate Charge (nC) Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 100 ...

Page 5

... RESPONSE) 0.01 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91208 S-81274-Rev. A, 16-Jun-08 IRFP22N60K, SiHFP22N60K 125 150 0.001 0. Rectangular Pulse Duration (sec Driver + - Vishay Siliconix D.U.T. ...

Page 6

... IRFP22N60K, SiHFP22N60K Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 800 TOP BOTTOM 600 400 200 100 Starting Junction Temperature Fig. 12c - Maximum Avalanche Energy vs. Drain Current I D 9.8A 14A 22A 125 150 Current regulator Same type as D.U.T. 50 kΩ ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91208. Document Number: 91208 S-81274-Rev. A, 16-Jun-08 IRFP22N60K, SiHFP22N60K Peak Diode Recovery dV/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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