IRFR9214TRPBF Vishay, IRFR9214TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRFR9214TRPBF
• Description: P CHANNEL MOSFET, -250V, 2.7A D-PAK
• Manufacturer: Vishay

Specifications of IRFR9214TRPBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -2.7A
• Drain Source Voltage Vds: -250V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: - 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
Vishay Siliconix
www.vishay.com
6
Fig. 12a - Unclamped Inductive Test Circuit
- 10 V
Fig. 13a - Basic Gate Charge Waveform
R
V
- 20 V
g
G
V
DS
Q
t
p
GS
I
AS
D.U.T.
0.01 Ω
L
Charge
Q
Q
GD
G
Driver
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
200
160
120
80
40
0
25
15 V
+
-
Starting T , Junction Temperature ( C)
V
A
DD
50
J
75
100
TOP
BOTTOM
Fig. 12b - Unclamped Inductive Waveforms
I
125
AS
12 V
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
-1.3A
-1.8A
-2.8A
°
I D
Current regulator
0.2 µF
150
- 3 mA
Current sampling resistors
50 kΩ
t
p
0.3 µF
I
G
S10-1139-Rev. C, 17-May-10
Document Number: 91282
D.U.T.
V
I
DS
D
+
-
V
DS