IRL620STRLPBF Vishay, IRL620STRLPBF Datasheet - Page 2

• Manufacturer Part Number: IRL620STRLPBF
• Description: N CH MOSFET, 200V, 5.2A, SMD-220
• Manufacturer: Vishay

Specifications of IRL620STRLPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.2A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRL620S, SiHL620S
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
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2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to Ambient (PCB
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
R
R
R
t
t
I
C
I
C
V
DS(on)
C
Q
Q
V
GS(th)
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
thJC
SM
t
thJA
thJA
I
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
r
f
D
S
rr
g
/T
J
T
Between lead,
6 mm (0.25") from
package and center
of die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
J
V
V
R
GS
GS
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
GS
DS
T
g
J
Reference to 25 °C, I
= 4.0 V
= 5.0 V
= 9.0 , R
= 10 V
= 25 °C, I
= 320 V, V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
DD
TEST CONDITIONS
DS
DS
DS
GS
-
-
-
F
= 100 V, I
= V
= 200 V, V
= 50 V, I
= 0 V, I
V
= 5.2 A, dI/dt = 100 A/μs
V
GS
V
DS
S
D
GS
GS
GS
I
D
= 5.2 A, V
= ± 10 V
= 20, see fig. 10
= 25 V,
, I
= 5.2 A, V
= 0 V,
= 0 V, T
see fig. 6 and 13
D
D
D
= 250 μA
D
= 250 μA
= 3.1 A
GS
I
I
D
D
= 5.2 A,
= 3.1 A
= 2.6 A
D
= 0 V
GS
J
= 1 mA
G
G
DS
= 125 °C
b
= 0 V
= 160 V,
b
b
MAX.
D
S
D
S
b
2.5
b
b
62
40
b
MIN.
200
1.0
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2476-Rev. B, 01-Nov-10
Document Number: 91302
TYP.
0.27
360
180
4.2
4.5
7.5
1.1
91
27
31
18
17
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.80
250
270
2.0
1.0
2.9
9.6
5.2
1.8
1.7
25
16
21
S
-
-
-
-
-
-
-
-
-
-
-
-
and L
UNIT
V/°C
D
nA
μA
nC
nH
μC
pF
ns
ns

V
V
S
A
V
)