IRLR014TRLPBF Vishay, IRLR014TRLPBF Datasheet - Page 2

• Manufacturer Part Number: IRLR014TRLPBF
• Description: N CHANNEL MOSFET, 60V, 7.7A, D-PAK
• Manufacturer: Vishay

Specifications of IRLR014TRLPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 7.7A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: 5V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 7.7 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLR014, IRLU014, SiHLR014, SiHLU014
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
R
V
C
V
R
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
DS
oss
t
SD
thJA
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
T
GS
GS
GS
J
V
R
T
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
G
= 5.0 V
= 4.0 V
= 5.0 V
J
Reference to 25 °C, I
= 12 Ω, R
= 25 °C, I
MIN.
= 48 V, V
V
-
-
-
V
V
V
f = 1.0 MHz, see fig. 5
V
DS
TEST CONDITIONS
GS
DS
DS
DD
c
= V
F
= 0 V, I
= 60 V, V
V
= 25 V, I
= 30 V, I
V
V
= 10 A, dI/dt = 100 A/µs
GS
GS
DS
D
S
GS
GS
I
= 7.7 A, V
= 2.8 Ω, see fig. 10
D
, I
= ± 10 V
= 25 V,
= 0 V, T
= 0 V,
see fig. 6 and 13
= 10 A, V
D
D
= - 250 µA
D
D
= 250 µA
GS
I
I
D
D
= 4.6 A
= 10 A,
= 4.6 A
= 3.9 A
= 0 V
D
TYP.
J
GS
= 1 mA
-
-
-
= 125 °C
DS
G
G
= 0 V
= 48 V,
b
b
D
S
b
b
b
D
S
b
MIN.
1.0
3.4
MAX.
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
110
5.0
50
S09-0058-Rev. A, 02-Feb-09
Document Number: 91321
0.073
TYP.
0.33
400
170
110
9.3
4.5
7.5
42
17
26
65
-
-
-
-
-
-
-
-
-
-
-
-
-
-
± 100
MAX.
0.20
0.28
0.65
S
250
130
2.0
8.4
3.5
6.0
7.7
1.6
25
31
-
-
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V