SI2301BDS-T1 Vishay, SI2301BDS-T1 Datasheet - Page 4

• Manufacturer Part Number: SI2301BDS-T1
• Description: P CHANNEL MOSFET, -20V, 2.2A TO-236
• Manufacturer: Vishay

Specifications of SI2301BDS-T1

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -2.2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -950mV
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Si2301BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.1
10
1
- 50
0
Source-Drain Diode Forward Voltage
- 25
0.2
V
I
T
D
SD
J
= 250 µA
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
- Temperature (°C)
25
0.6
50
75
0.8
0.01
100
0.1
100
10
T
1
0.1
J
= 25 °C
Limited by
1.0
R
* V
125
DS(on)*
Single Pulse
T
GS
A
= 25 °C
150
V
1.2
Square Wave Pulse Duration (s)
DS
minimum V
Safe Operating Area
- Drain-to-Source Voltage (V)
1
GS
at which r
DS(on)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
10
8
6
4
2
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
10 µs
100 µs
1 ms
10 ms
100 ms
DC, 100 s, 10 s, 1 s
0.1
1
V
GS
100
- Gate-to-Source Voltage (V)
Single Pulse Power
I
D
= 2.8 A
2
T
1
A
Time (s)
= 25 °C
S-80427-Rev. D, 03-Mar-08
Document Number: 72066
10
3
100
4
1000
5