SI4838DY-T1-E3 Vishay, SI4838DY-T1-E3 Datasheet

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SI4838DY-T1-E3

Manufacturer Part Number
SI4838DY-T1-E3
Description
N CHANNEL MOSFET, 12V, 25A, SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4838DY-T1-E3

Transistor Polarity
N Channel
Continuous Drain Current Id
25A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
3mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3 mOhm @ 25A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 4.5V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.003 Ohm @ 4.5 V
Gate Charge Qg
60 nC
Forward Transconductance Gfs (max / Min)
80 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
17 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4838DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4838DY-T1-E3
Manufacturer:
VISHAY
Quantity:
2 500
Part Number:
SI4838DY-T1-E3
Manufacturer:
NXP
Quantity:
2 500
Part Number:
SI4838DY-T1-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI4838DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71359
S09-0221-Rev. D, 09-Feb-09
Ordering Information: Si4838DY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
12
(V)
G
S
S
S
Si4838DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
0.003 at V
0.004 at V
R
Top View
DS(on)
SO-8
J
a
= 150 °C)
a
GS
GS
(Ω)
= 4.5 V
= 2.5 V
N-Channel 12-V (D-S) MOSFET
a
8
7
6
5
D
D
D
D
a
A
I
D
= 25 °C, unless otherwise noted
25
20
(A)
Steady State
Steady State
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
Symbol
Symbol
T
R
R
J
Available
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFETs: 2.5 V Rated
Typical
10 s
2.9
3.5
2.2
25
20
29
67
13
G
N-Channel MOSFET
- 55 to 150
± 8
12
60
Steady State
D
S
Maximum
1.3
1.6
17
13
35
80
16
Vishay Siliconix
1
Si4838DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4838DY-T1-E3 Summary of contents

Page 1

... SO Top View Ordering Information: Si4838DY-T1-E3 (Lead (Pb)-free) Si4838DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4838DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Source-Drain Diode Forward Voltage Document Number: 71359 S09-0221-Rev. D, 09-Feb-09 7500 6000 4500 3000 1500 0.015 0.012 0.009 °C J 0.006 0.003 0.000 0.8 1.0 1.2 Si4838DY Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 4 1.4 1.2 1.0 0.8 0 ...

Page 4

... Si4838DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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