2N6292 MULTICOMP, 2N6292 Datasheet

BIPOLAR TRANSISTOR, NPN, 70V

2N6292

Manufacturer Part Number

2N6292

Description

BIPOLAR TRANSISTOR, NPN, 70V

Manufacturer

MULTICOMP

Datasheet

1.2N6292.pdf (1 pages)

Specifications of 2N6292

Transistor Polarity

NPN

Collector Emitter Voltage V(br)ceo

70V

Transition Frequency Typ Ft

4MHz

Power Dissipation Pd

40W

Dc Collector Current

7A

Dc Current Gain Hfe

150

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

2N6292

Manufacturer:

ST

Quantity:

20 000

Company:

BOSTOCK HK LIMITED

BOSTOCK HK LIMITED

Part Number:

2N6292

Manufacturer:

ST

0

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

2N6292G

Manufacturer:

RACKCHIP

Quantity:

2 000

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

2N6292G

Manufacturer:

ON

Quantity:

6 040

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Note 2. f

Absolute Maximum Ratings:

Collector-Base Voltage, V

Collector-Emitter Voltage, V

Emitter-Base Voltage, V

Continuous Collector Current, I

Base Current,

Total Device Dissipation (T

P

Operating Junction Temperature Range,

T

Storage Temperature Range, T

Electrical Characteristics: (T

OFF Characteristics

Collector-Emitter Breakdown Voltage

(Note 1)

Collector Cut-Off Current

Emitter Cut-Off Current

ON Characteristics

DC Current Gain (Note 1)

Collector-Emitter Saturation Voltage

(Note 1)

Base-Emitter On Voltage

(Note 1)

Small-Signal Characteristics

Current Gain-Bandwidth Product

(Note 2)

Output Capacitance

Small-Signal Current Gain

Note 1. Pulse Test: Pulse Width </= 300µs, Duty Cycle </= 2%.

D

J

Derate above 25°C

is defined as the frequency at which |h

Parameter

I

B

EBO

CBO

C

CEO

= +25°C),

stg

A

C

= +25°C unless otherwise specified)

| extrapolates to unity.

-65° to +150°C

-65° to +150°C

Symbol

V

V

V

(BR)CEO

I

I

I

C

h

CE(sat)

CEX

CEO

EBO

BE(on)

h

f

40mW/°C

FE

obo

T

fe

3A

40W

70V

80V

5V

7A

I

V

V

V

V

V

I

I

V

V

V

C

C

C

CE

CB

EB

CE

CE

CE

CB

CE

= 100mA, I

= 7A, I

= 7A, V

= 80V, V

= 60V, I

= 5V, I

= 4V, I

= 4V, I

= 4V, I

= 10V, I

= 4V, I

Test Conditions

B

CE

= 3A,

C

C

C

C

C

B

E

= 0

= 2A,

= 7A

= 4V,

= 500mA, f = 1MHz,

= .5A, f = 50kHz

EB(off)

B

Dim

= 0

= 0, f = 1MHz

= 0

C

D

G

H

M

N

O

A

B

E

F

J

K

L

= 1.5V

14.42

9.63

3.56

1.15

3.75

2.29

2.54

12.7

2.03

Min

----

----

2.8

----

DEF 7

16.51

10.67

14.73

31.24

Max

4.83

3.88

2.79

3.43

0.56

4.07

2.92

Min

0.9

1.4

2.3

70

30

20

4

-

-

-

-

-

Typ

-

-

-

-

-

-

-

-

-

-

-

Max

100

250

150

3.5

1

1

3

-

-

-

MHz

Unit

mA

mA

µA

pF

V

V

V

-

-

-

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