FMMT458 Diodes Inc, FMMT458 Datasheet
FMMT458
Manufacturer Part Number
FMMT458
Description
BIPOLAR TRANSISTOR, NPN, 400V
Manufacturer
Diodes Inc
Datasheet
1.FMMT458.pdf
(2 pages)
Specifications of FMMT458
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
400V
Transition Frequency Typ Ft
50MHz
Power Dissipation Pd
500mW
Dc Collector Current
225mA
Dc Current Gain Hfe
100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMMT458TA
Manufacturer:
ZETEX
Quantity:
9 000
Part Number:
FMMT458TA
Manufacturer:
ZETEX
Quantity:
20 000
Company:
Part Number:
FMMT458TAPBF
Manufacturer:
MIC
Quantity:
800
SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 – APRIL 2002
FEATURES
*
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions.
Spice parameter data is available upon request for this device
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Power Dissipation at T
Operating and Storage Temperature Range
400 Volt V
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Current Transfer Ratio
Transition Frequency
Breakdown Voltage
Breakdown Voltage
Breakdown Voltage
Output Capacitance
Saturation Voltage
Saturation Voltage
Collector-Emitter
Collector-Emitter
Turn On Voltage
Switching times
Collector-Base
Static Forward
Emitter-Base
Base-Emitter
Base-Emitter
PARAMETER
CEO
amb
=25°C
FMMT558
458
SYMBOL
V
V
V
V
V
V
CEO(sus)
(BR)CBO
(BR)EBO
C
I
I
I
CE(sat)
BE(sat)
BE(on)
h
CBO
t
t
EBO
CES
f
obo
on
off
FE
T
amb
TBA
MIN.
400
400
100
100
15
50
5
2260 Typical
SYMBOL
V
V
I
I
I
P
T
V
135 Typical
C
CM
B
tot
j
CBO
CEO
EBO
:T
= 25°C).
stg
MAX.
100
100
100
300
0.2
0.5
0.9
0.9
5
-55 to +150
UNIT
MHz
nA
nA
nA
pF
ns
ns
VALUE
V
V
V
V
V
V
V
400
400
225
200
500
5
1
FMMT458
C
I
I
I
I
C
I
I
I
I
B1
C
C
I
C
C
C
C
=100mA, V
V
I
C
=50mA, V
=50mA, V
=50mA, V
C
=20mA, I
=50mA, I
=50mA, I
SOT23
=10mA, V
=5mA, I
CB
CONDITIONS.
=1mA, V
=20V, f=1MHz
I
V
V
I
I
C
f=20MHz
C
E
V
=10mA*
CE
CB
=100 A
=100 A
EB
=320V
=320V
=4V
B2
UNIT
mW
mA
mA
B
B
B
CC
CE
CE
CE
°C
=-10mA
=2mA*
=6mA*
=5mA*
V
V
V
A
CE
CE
B
=10V*
=10V
=10V*
=100V
=10V*
=20V
E
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FMMT458 Summary of contents
Page 1
... CBO I 100 CES I 100 EBO V 0.2 CE(sat) 0.5 V 0.9 BE(sat) V 0.9 BE(on) h 100 FE 100 300 obo t 135 Typical on t 2260 Typical off TBA FMMT458 C SOT23 VALUE UNIT 400 400 5 225 1 200 500 -55 to +150 UNIT CONDITIONS =100 =10mA =100 =320V =320V CE ...
Page 2
... I C 1.0 V =10V CE 0.1 D.C. 1s 100ms 10ms 0.01 1.0ms 0.001 TBA FMMT458 -55° = +25°C +100°C +175°C 0.01 0 Collector Current (Amps CE(sat) C -55° = +25°C +100°C +175°C 0.01 0 Collector Current (Amps) ...