MJ11016 MULTICOMP, MJ11016 Datasheet - Page 3

• Manufacturer Part Number: MJ11016
• Description: BIPOLAR TRANSISTOR, NPN, 120V, TO-3
• Manufacturer: MULTICOMP

Specifications of MJ11016

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 120V
• Power Dissipation Pd: 200W
• Dc Collector Current: 30A
• Dc Current Gain Hfe: 1000
• Operating Temperature Range: -65°C To +200°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

(1) Pulse Test : Pulse Width = 300µs, Duty Cycle 2.0%.
(2) f
Electrical Characteristics (T
MJ11016
Off Characteristics
Collector-Emitter Sustaining Voltage (1)
(l
Collector Cutoff Current (V
Collector-Emitter Leakage Current
(V
(V
Emitter Cutoff Current (V
On Characteristrics (1)
DC Current Gain
(l
(l
Collector-Emitter Saturation Voltage
(l
(l
Base-Emitter Saturation Voltage
(l
(l
Dynamic Characteristics
Small-Signal Current Gain
(l
T
MJ11016
C
c
c
c
c
c
c
c
Internal Schematic Diagram
= |h fe |• f test .
CE
CE
= 100mA, l
= 20A,V
= 30A,V
= 20A, I
= 30A, l
= 20A, I
= 30A, I
= 10A, V
PNP
= 120V, R
= 120V, R
B
B
B
B
CE
CE
CE
= 300mA)
= 200mA)
= 200mA)
= 300mA) )
B
= 5.0V)
= 5.0V)
= 3.0V, f =1.0MHz)
= 0)
BE
BE
= 1.0KΩ)
= 1.0KΩ, T
Characteristic
EB
CE
= 5.0V, I
C
= 50 V, I
= 125°C)
C
C
B
= 0 )
= 25°C unless otherwise noted)
= 0.0 )
MJ11016
MJ11016
MJ11016
Page <3>
V
Symbol
V
V
EO (sus)
CE (sat)
BE (sat)
I
I
I
|h
h
CEO
CER
EBO
FE
fe
|
Minimum
1000
120
200
4.0
-
-
-
-
-
Maximum
1.0
1.0
5.0
5.0
3.0
4.0
3.5
5.0
-
-
-
13/08/08 V1.1
Unit
mA
V
V
-
-