TIP35C MULTICOMP, TIP35C Datasheet - Page 3

• Manufacturer Part Number: TIP35C
• Description: BIPOLAR TRANSISTOR, NPN, 100V
• Manufacturer: MULTICOMP

Specifications of TIP35C

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 100V
• Transition Frequency Typ Ft: 3MHz
• Power Dissipation Pd: 125W
• Dc Collector Current: 25A
• Dc Current Gain Hfe: 75
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TIP35C, 36C
Complementary Power Transistors
Figure - 6 Active Region Safe Operating Area
Figure - 2 DC Current Gain
I
C
I
, Collector Current (AMP)
C
V
Figure - 4 Turn-On time
, Collector Current (AMP)
CE
, Collector Emitter (Volts)
Page 3
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown
safe operating area curves indicate I
that must be observed for reliable operation i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
The data of Figure - 6 is based on T
depending on power level . Second breakdown pulse limits are
valid for duty cycle to 10% but must be derated when T
second breakdown limitations do not derate the same as
thermal limitation.
Figure - 5 Reverse Base Safe Operating Area
V
I
CE
C
Figure - 3 Turn-Off Time
, Collector Current (AMP)
, Collector Emitter (Volts)
C
C
-V
= 25°C; T
CE
limits of the transistor
J(pk)
31/05/05 V1.0
is variable
C
≥25°C,