ZXTN25040DFLTA Diodes Inc, ZXTN25040DFLTA Datasheet

TRANSISTOR, NPN, SOT-23

ZXTN25040DFLTA

Manufacturer Part Number
ZXTN25040DFLTA
Description
TRANSISTOR, NPN, SOT-23
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXTN25040DFLTA

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
40V
Power Dissipation Pd
350mW
Dc Collector Current
4A
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-23
No. Of Pins
3
Dc Current Gain Hfe
450
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXTN25040DFLTA
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
ZXTN25040DFLTA
Quantity:
2 938
ZXTN25040DFL
40V, SOT23, NPN low power transistor
Summary
BV
BV
BV
I
V
R
P
Complementary part number ZXTP25040DFL
Description
Advanced process capability has been used to achieve high current gain
hold up making this device ideal for applications requiring high pulse
currents.
Features
Applications
Ordering information
Device marking
1B7
Issue 3 - March 2008
© Zetex Semiconductors plc 2008
C(cont)
Device
ZXTN25040DFLTA
D
CE(sat)
CE(sat)
CEX
CEO
ECO
High peak current
Low saturation voltage
130V forward blocking voltage
6V reverse blocking voltage
MOSFET and IGBT gate driving
DC-DC conversion
LED driving
Interface between low voltage IC's and loads
= 350mW
> 130V
> 40V
> 6V
= 1.5A
= 59m
< 85mV @ 1A
Reel size
(inches)
7
Tape width
(mm)
8
1
Quantity per reel
3000
C
Pinout - top view
B
www.zetex.com
E
C
B
E

Related parts for ZXTN25040DFLTA

ZXTN25040DFLTA Summary of contents

Page 1

... MOSFET and IGBT gate driving • DC-DC conversion • LED driving • Interface between low voltage IC's and loads Ordering information Device Reel size (inches) ZXTN25040DFLTA Device marking 1B7 Issue 3 - March 2008 © Zetex Semiconductors plc 2008 Tape width (mm Pinout - top view ...

Page 2

Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current Base current Peak pulse current Power dissipation 25°C amb Linear derating factor Operating and storage temperature ...

Page 3

Characteristics Issue 3 - March 2008 © Zetex Semiconductors plc 2008 ZXTN25040DFL 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (forward blocking) Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Emitter-collector breakdown voltage (reverse blocking) Emitter-collector breakdown voltage (base open) Collector cut-off current Collector emitter cut-off current Emitter cut-off ...

Page 5

Typical characteristics Issue 3 - March 2008 © Zetex Semiconductors plc 2008 ZXTN25040DFL 5 www.zetex.com ...

Page 6

Package outline - SOT23 leads Dim. Millimeters Min. Max 1.12 A1 0.01 0.10 b 0.30 0.50 c 0.085 0.20 D 2.80 3.04 e 0.95 NOM Note: Controlling dimensions are in millimeters. ...

Page 7

Issue 3 - March 2008 © Zetex Semiconductors plc 2008 Intentionally left blank 7 ZXTN25040DFL www.zetex.com ...

Page 8

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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