T410-700T STMicroelectronics, T410-700T Datasheet - Page 5

no-image

T410-700T

Manufacturer Part Number
T410-700T
Description
TRIAC 4A 0.01A 700V TO220AB
Manufacturer
STMicroelectronics
Datasheet

Specifications of T410-700T

Peak Repetitive Off-state Voltage, Vdrm
700V
On State Rms Current It(rms)
4A
Peak Non Rep Surge Current Itsm 50hz
30A
Svhc
No SVHC (15-Dec-2010)
Current Itsm @ 60hz
31A
Gate
RoHS Compliant
Package / Case
TO-220AB

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
T410-700T
Manufacturer:
ST
0
Part Number:
T410-700T-TR
Manufacturer:
ST
0
Part Number:
T410-700TRG
Manufacturer:
ST
0
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t
and corresponding value of I
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
Figure 11: DPAK thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 µm)
100
500
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
90
80
70
60
50
40
30
20
10
10
0
1
0.01
0.1
0
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
R
I
TSM
th(j-a)
dI/dt limitation:
(A), I t (A s)
50A/µs
4
(°C/W)
2
8
2
12
0.10
1.0
(dV/dt)c (V/µs)
16
t (ms)
S(cm²)
p
20
2
t
24
T405
10.0
1.00
28
32
T initial=25°C
I t
j
T435
p
2
T410
I
< 10 ms
TSM
36
10.00
100.0
40
Figure 8: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
Figure 10: Relative variation of critical rate of
decrease of main current versus junction
temperature
2.5
2.0
1.5
1.0
0.5
0.0
6
5
4
3
2
1
0
0
(dI/dt)c [T ] /
-40
I
GT H L
I
H
,I ,I [T ] /
& I
L
-20
j
25
j
I
GT
(dI/dt)c [T s
0
I
GT H L
,I ,I [T =25°C]
20
j
50
j
pecified]
40
T (°C)
T (°C)
j
j
60
75
80
100
100
T4 Series
120
5/10
125
140

Related parts for T410-700T