CHTA16-400 C3 SEMI, CHTA16-400 Datasheet
CHTA16-400
Manufacturer Part Number
CHTA16-400
Description
TRIAC, 400V, 16A, TO-220AB
Manufacturer
C3 SEMI
Datasheet
1.CHTA16-400.pdf
(2 pages)
Specifications of CHTA16-400
Peak Repetitive Off-state Voltage, Vdrm
400V
Gate Trigger Current Max (qi), Igt
35mA
On State Rms Current It(rms)
16A
Peak Non Rep Surge Current Itsm 50hz
180A
Holding Current Max Ih
35mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Applications
• Heat Regulation
• Light Dimming
• Control of Inductive Loads
ISO9001 Certified
TO-220AB Non-Isolated
TO-220AB Isolated
• Ovens
• Coffee Makers
• Cookers
• Motors
• Transformers
A1
A1
(CHTA16)
(CHTB16)
A2
A2
G
G
G
A1
A2
A2
C3 Semiconductor, LLC
Absolute Maximum Ratings
RMS On-State Current (full sine wave)
Non Repetitive Surge Peak On-State Current
(Full Cycle, Tj Initial = 25
I
Critical rate of rise of on-state current
I
Peak Gate Current @ T
Average Gate Power Dissipation @ Tj = 150
S
O
s I
Electrical Characteristics
I
V
V
I
I
I
dv/dt MIN @ V
(di/dt)c MIN without snubber
Static Characteristics
V
V to MAX @ Threshold Voltage
R d MAX @ Dynamic Resistance
I
I
GENERAL NOTES
2
G
GT
H
L
L
DRM
RRM
1. Minimum IGT is guaranted at 5% of IGT max.
2. For both polarities of A2 referenced to A1
3. All parameters at 25 degrees C unless otherwise specified.
4. Commutating dv/dt = 50V/µs, (exponential to 200Vpk)
o t
GT
GD
T
p
t
l o
=2 x I
MAX @ I
MAX @ I
MAX @ I
r e
MAX @ I
a V
a r
MAX @ V
i t a
MAX @ V
MIN @ V
i t a
MAX @ V
MAX @ V
e g
u l
n o
f e
GT
g n
e T
o V
, tr<100 ns, T
r o
J
m
G
G
T
n u
a t l
TM
u f
e p
= 100 mA
= 1.2 I
= 1.2 I
D
D
>
>
>
>
>
D
i t c
e g
i s
=12 V, R
D
DRM =
DRM =
=22.5 A, tp = 380µs
a r
=V
=12 V, R
Superior Commutating
Performance at High Temperature
(di/dt)c = 14A/ms @ (dv/dt)c = 50V/µs
Ideal for Most Demanding Applications
Alternistor/No Snubber Type
IGT 35 mA Max.
VDRM/VRMM 400, 600, 800V
g n
= 67%V
n o
u t
C (
DRM
GT
GT
e r
H
e T
V
V
A T
, R
R
RRM
RRM
j
m
L
NOTE 2
= 150
j
L
n a
=
= 30Ω
DRM
e p
˚
S
L
= 30Ω
) C
= 3.3kΩ
1
e g
e
a r
0 5
i r
˚
s e
(gate open)
u t
C ˚
C
NOTES 2 & 4
e r
NOTE 1
NOTE 2
n o
NOTE 2
R
) y l
NOTE 2
n a
e g
NOTE 2
˚
C
Tc = 125˚C
Tc = 115˚C
Tj = 150
T
T
T
T
T
T
T
= j
= j
= j
= j
= j
= j
= j
1
1
5 2
1
1
5 2
1
0 5
0 5
0 5
0 5
0 5
C ˚
C ˚
˚
C ˚
C ˚
C ˚
C ˚
C ˚
C
P O W E R C O M P O N E N T S
High Temperature
TO-220AB Iso
CONDITIONS
p t
TO-220AB
p t
F =50 Hz
F
QI-II-III
QI-II-III
QI-II-III
=
QI-III
=
=
Q-II
0 6
0 1
CHTA/CHTB16
0 2
z H
m
s µ
s
16Amp - 400/600/800V -
SYMBOL
5
4 1
P
I
5 2
5
35mA
35mA
50mA
80mA
0 0
T(RMS)
0.15V
I
di/dt
G
V
1.3V
. 1
. 0
µ 5
5 .
I
T
TSM
A
I
GM
T
ISO
m
A (
stg
/ V
2
V 5
V 8
m
m /
j
A
t
Ω
) V
s µ
A
s
150˚C Series
-40 to +150
-40 to +150
2500 V
RATING
150A
100A/µs
180A
190A
16A
1
4A
W
TRIAC
2
RMS
s
˚
˚
C
C
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CHTA16-400 Summary of contents
Page 1
... RMS On-State Current (full sine wave) Non Repetitive Surge Peak On-State Current (Full Cycle, Tj Initial = Critical rate of rise of on-state current tr<100 ns Peak Gate Current @ Average Gate Power Dissipation @ Tj = 150 TO-220AB Isolated (CHTA16 Electrical Characteristics A1 I MAX @ MAX @ V GT TO-220AB Non-Isolated (CHTB16) V MIN @ V GD ...
Page 2
... P 0.99 1.55 0.039 0.061 Q 2.67 0.105 ISO9001 Certified Approvals UL - E72445 © 2007 C3 Semiconductor, LLC, All Rights Reserved. Specifications are subject to change without prior notice. C3 Semiconcductor and the C3 semiconductor l ogo are trademarks of C3 Semiconductor, LLC. Thermal Resistances Junction to Case (AC) ...