CTB12-600B C3 SEMI, CTB12-600B Datasheet - Page 2

• Manufacturer Part Number: CTB12-600B
• Description: TRIAC, 600V, 12A, TO-220AB
• Manufacturer: C3 SEMI

Specifications of CTB12-600B

• Peak Repetitive Off-state Voltage, Vdrm: 600V
• Gate Trigger Current Max (qi), Igt: 50mA
• On State Rms Current It(rms): 12A
• Peak Non Rep Surge Current Itsm 50hz: 120A
• Holding Current Max Ih: 50mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

(For CTA series)
ISO9001 Certified
Approvals
UL Recognized Component - E72445
© 2007 C3 Semiconductor, All Rights Reserved. Specifications are subject to change without prior notice. C3 Semiconductor and the C3 Semiconductor l ogo are trademarks of C3 Semiconductor, LLC.
Static Characteristics
V
V to MAX @ Threshold Voltage
R d MAX @ Dynamic Resistance
I
I
Thermal Resistances
Junction to Case (AC)
Junction to Case (AC)
Junction to Ambient
Junction to Ambient
DRM
RRM
T
REF. Min.
M
MAX @ I
M
A
B
C
D
G
H
K
N
O
P
Q
E
F
J
L
I
MAX @ V
MAX @ V
Millimeters
15.24
12.78
15.49 16
9.96
0.69
1.22
4.62
0.46
2.49
2.39
6.48
3.78
2.59
0.99
0.99
E
TM
DRM
=17 A, tp = 380µs
DRM
Weight: 2.3g (0.08 oz)
J
Typ.
3.23
2.67
D
Dimensions
= V
= V
P
RRM
RRM
15.75
13.79
10.36
16.51
L
Max.
C3 Semiconductor, LLC
0.94
1.32
4.83
0.61
2.84
2.69
6.88
3.89
2.9
1.55
1.55
O
N
B
A
NOTE 2
C
NOTE 2
Inches
Min.
NOTE 2
0.6
0.503
0.392
0.027
0.048
0.182
0.018
0.098
0.094
0.255
0.149
0.61
0.102
0.039
0.039
F
TO-220AB Isolated
TO-220AB Isolated
Typ.
0.127
0.63
0.105
Q
I
G
TO-220AB
TO-220AB
H
Max.
0.62
0.543
0.408
0.037
0.052
0.19
0.024
0.112
0.106
0.271
0.153
0.65
0.114
0.061
0.061
Tj = 25˚C
Tj = 125˚C
Tj = 125˚C
Tj = 25˚C
Tj = 125˚C
K
SYMBOL
R th(j-c)
R th(j-c)
R th(j-a)
R th(j-a)
For recommended applications and more information contact:
For recommended applications and more information contact:
USA : Sales Support
USA : Sales Support
C3 Semiconductors, LLC. 2320 Paseo de las Americas, Ste. 104, San Diego, CA 92154
Email : [e-mail]
14
12
10
8
6
4
2
0
Fig. 1: Power dissipation versus RMS on-state current (full cycle).
0
100.0
10.0
1.0
2
0.5
on-state voltage (instantaneous values)
RATING
1.4 ˚ C/W
2.3 ˚ C/W
1
60 ˚ C/W
60 ˚ C/W
4
35mΩ
1.55V
0.85V
1mA
5µA
Fig. 3: On-state current versus
1.5
[phone]
6
2
I
WEB SITE: http://www.C3semi.com
T(RMS)
V
8
2.5
TM
SERIES
Part Number Selection
Part Number
CTA/CTB12-xxxB
CTA/CTB12-xxxBW
CTA/CTB12-xxxC
CTA/CTB12-xxxCW
CTA/CTB12-xxxSW
CTA/CTB12-xxxTW
Part Number Designation
CT
[V]
[A]
10
3
© 2007 C3 Semiconductors, Speci cations subject to change without notice.
3.5
12
4
Isolation Type
A: Isolated
B: Non-Isolated
14
4.5
12
16
400, 600, 800, 1000
400, 600, 800, 1000
400, 600, 800, 1000
400, 600, 800, 1000
400, 600, 800, 1000
400, 600, 800
5
Rated Current
12: 12 Amp
Voltage [Vpk]
18
250
160
120
100
80
60
50
40
30
20
10
Maximum
Blocking Voltage
400: 400Vpk
600: 600Vpk
800: 800Vpk
1000: 1000Vpk
1
12Amp - 400/600/800/1000V - TRIAC
18
16
14
12
10
8
6
4
2
0
80
I
CW
Fig. 4: Non-repetitive surge peak on-state
GT
50mA
50mA
25mA
35mA
10mA
5mA
[mA]
current versus number of cycles.
Fig. 2: RMS on-state current versus
Type
B: Standard (I
BW: Alternistor/No Snubber (I
C: Standard (I
CW: Alternistor/No Snubber (I
SW: Logic Level (I
TW: Logic Level (I
CTA/CTB12
90
case temperature (full cycle)
Alternistor/No Snubber TO-220AB
Alternistor/No Snubber TO-220AB
Number of Cycles
10
Logic Level
Logic Level
100
Standard
Standard
T
Packaging
Blank: Bulk
PT: Plastic Tube
C
Type
GT
GT
[˚C]
Isolated
=50mA)
=25mA)
GT
GT
110
=5mA)
=10mA)
100
Non-Repetitive
Tj initial = 25˚C
Non-Isolated
TO-220AB
TO-220AB
TO-220AB
TO-220AB
Package
120
GT
GT
=35mA)
=50mA)
1000
130