SQM47N10-24L-GE3 Vishay, SQM47N10-24L-GE3 Datasheet
SQM47N10-24L-GE3
Specifications of SQM47N10-24L-GE3
Related parts for SQM47N10-24L-GE3
SQM47N10-24L-GE3 Summary of contents
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... TrenchFET 0.027 • Package with Low Thermal Resistance 47 • AEC-Q101 Qualified Single • Compliant to RoHS Directive 2002/95/EC • Find out more about Vishay’s Automotive Grade Product D Requirements at N-Channel MOSFET TO-263 SQM47N10-24L-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 125 °C ...
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... SQM47N10-24L Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance b Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... V - Drain-to- ource Voltage (V) D Capacitance Document Number: 64711 S10-1999-Rev. B, 13-Sep- °C, unless otherwise noted) A 120 100 0.10 0.08 0.06 0.04 0. 100 SQM47N10-24L Vishay Siliconix ° 125 ° ° ate-to- ource Voltage (V) Transfer Characteristics 100 I - Drain Current (A) D On-Resistance vs. Drain Current ...
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... SQM47N10-24L Vishay Siliconix TYPICAL CHARACTERISTICS (T 3 2.5 2.0 1.5 1.0 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.15 0.12 0.09 0.06 0. ate-to- ource Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com °C, unless otherwise noted) A 100 0.1 0.01 0.001 100 125 150 175 0.5 0 ...
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... S10-1999-Rev. B, 13-Sep-10 I Limited DM 100 Limited DS(on 0 °C C Single Pulse BVDSS Limited 0.01 0.01 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area - uare Wave Pul e Duration ( ) Normalized Thermal Transient Impedance, Junction-to-Ambient SQM47N10-24L Vishay Siliconix 100 µ 100 ms 100 is specified 10 100 www.vishay.com 1000 5 ...
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... SQM47N10-24L Vishay Siliconix THERMAL RATINGS ( °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" ...
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