TSM5ND50CP Taiwan Semiconductor, TSM5ND50CP Datasheet

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TSM5ND50CP

Manufacturer Part Number
TSM5ND50CP
Description
MOSFET,N CH,500V,4.4A,TO252
Manufacturer
Taiwan Semiconductor
Datasheet

Specifications of TSM5ND50CP

Continuous Drain Current Id
4.4A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
30V
Transistor Case Style
TO-252
No. Of Pins
3
Operating
RoHS Compliant
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Absolute Maximum Rating
Thermal Performance
Notes: Surface mounted on FR4 board t ≤ 10sec
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Peak Diode Recovery (Note 2)
Single Pulse Drain to Source Avalanche Energy (Note 3)
Total Power Dissipation @Ta = 25
Operating Junction and Storage Temperature Range
General Description
The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Features
Ordering Information
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
TSM5ND50CP RO
Low gate charge typical @ 20nC
Low Crss typical @ 17pF
Fast Switching
100% avalanche tested
Improved dv/dt capability
ESD Protection
Part No.
TO-252
Package
TO-252
Pin Definition:
1. Gate
2. Drain
3. Source
o
(Ta = 25
C
2,500pcs / 13” Reel
o
C unless otherwise noted)
Packing
1/8
PRODUCT SUMMARY
500V N-Channel Power MOSFET
V
DS
Symbol
Symbol
500
T
P
dv/dt
J
(V)
V
V
, T
E
I
DTOT
I
DM
I
DS
GS
D
S
AS
JC
JA
STG
N-Channel MOSFET
Block Diagram
1.5 @ V
R
-55 to +150
DS(on)
Limit
Limit
17.6
1.78
62.5
500
±30
130
4.4
4.4
4.5
70
GS
TSM5ND50
(Ω)
=10V
Version: C07
I
D
2.2
o
o
Unit
Unit
V/ns
C/W
C/W
(A)
mJ
o
W
V
V
A
A
A
C

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TSM5ND50CP Summary of contents

Page 1

... Fast Switching ● 100% avalanche tested ● Improved dv/dt capability ● ESD Protection Ordering Information Part No. Package TSM5ND50CP RO TO-252 Absolute Maximum Rating Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Peak Diode Recovery (Note 2) ...

Page 2

Electrical Specifications ( Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse ...

Page 3

Electrical Characteristics Curve Output Characteristics On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 500V N-Channel Power MOSFET o ( unless otherwise noted) Source-Drain Diode Forward Voltage 3/8 TSM5ND50 Transfer Characteristics Gate Charge Version: C07 ...

Page 4

Electrical Characteristics Curve On-Resistance vs. Gate-Source Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 500V N-Channel Power MOSFET o ( unless otherwise noted) 4/8 TSM5ND50 Threshold Voltage Version: C07 ...

Page 5

Unclamped Inductive Load Test Circuit and Waveform Switching Time Test Circuits for Resistive Load Gate Charge Test Circuit 500V N-Channel Power MOSFET 5/8 TSM5ND50 Version: C07 ...

Page 6

Test Circuit for Inductive Load Switching and Diode Recovery Times 500V N-Channel Power MOSFET 6/8 TSM5ND50 Version: C07 ...

Page 7

Marking Diagram 500V N-Channel Power MOSFET SOT-252 Mechanical Drawing Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec Lot Code 7/8 TSM5ND50 TO-252 DIMENSION MILLIMETERS INCHES DIM ...

Page 8

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No ...

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