VS-HFA120FA120P Vishay, VS-HFA120FA120P Datasheet

TRANSISTOR,IGBT,1200V,120A,SOT227

VS-HFA120FA120P

Manufacturer Part Number
VS-HFA120FA120P
Description
TRANSISTOR,IGBT,1200V,120A,SOT227
Manufacturer
Vishay
Datasheet

Specifications of VS-HFA120FA120P

Transistor Type
SOT-227
Power Dissipation Max
337W
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-227
No. Of Pins
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 94608
Revision: 22-Jul-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
RMS isolation voltage
Operating junction and storage
temperature range
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Cathode to anode
breakdown voltage
Forward voltage
Reverse leakage current
I
I
F(DC)
F(AV)
V
t
rr
F
at T
at T
(typical)
(typical)
V
R
C
C
per leg
per leg
SOT-227
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
Ultrafast Soft Recovery Diode, 120 A
per module
SYMBOL
V
V
I
per leg
RM
FM
BR
60 A at 86 °C
60 A at 62 °C
1200 V
145 ns
2.8 V
J
I
I
I
I
V
T
SYMBOL
R
F
F
F
R
J
T
= 25 °C unless otherwise specified)
= 60 A
= 120 A
= 60 A, T
= 100 μA
V
= 150 °C, V
J
I
= V
I
FSM
FRM
, T
V
P
ISOL
I
F
R
D
Stg
R
TEST CONDITIONS
rated
HEXFRED
J
= 125 °C
R
T
T
Rated V
T
T
Any terminal to case, t = 1 minute
= V
C
J
C
C
= 25 °C
= 86 °C
= 25 °C
= 100 °C
R
rated
R,
square wave, 20 kHz, T
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
The dual diode series configuration (HFA120FA120P) is
used for output rectification or freewheeling/clamping
operation and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
TEST CONDITIONS
®
DiodesEurope@vishay.com
MIN.
1200
-
-
-
-
-
C
= 60 °C
Vishay Semiconductors
TYP.
2.8
3.6
2.7
2.0
2.7
-
HFA120FA120P
- 55 to + 150
MAX.
1200
2500
120
350
130
337
135
60
MAX.
4.0
5.3
75
10
-
-
www.vishay.com
UNITS
UNITS
mA
μA
°C
W
V
V
A
V
1

Related parts for VS-HFA120FA120P

VS-HFA120FA120P Summary of contents

Page 1

... Reverse leakage current I RM Document Number: 94608 For technical questions within your region, please contact one of the following: Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, ® HEXFRED FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • ...

Page 2

... Junction to case, single leg conducting Junction to case, both legs conducting Case to heatsink Weight Mounting torque www.vishay.com For technical questions within your region, please contact one of the following: 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, ® HEXFRED Ultrafast Soft Recovery Diode, 120 °C unless otherwise specified) J TEST CONDITIONS ° ...

Page 3

... HFA120FA120P Vishay Semiconductors T = 150 ° 125 ° °C J 200 400 600 800 1000 V - Reverse Voltage (V) R Fig Typical Values of Reverse Current vs. Reverse Voltage 0.1 1 Characteristics 180° 120° 90° 60° 30° RMS limit Average Forward Current ( F(AV) Fig Forward Power Loss Characteristics www ...

Page 4

... HFA120FA120P Vishay Semiconductors 300 250 T = 125 °C J 200 150 °C J 100 50 100 dI /dt (A/µs) 94608_06 F Fig Typical Reverse Recovery Time vs. dI 94608_08 Note (1) Formula used ( REV Pd = Forward power loss = F(AV Inverse power loss = D); I REV R1 R www.vishay.com For technical questions within your region, please contact one of the following: 4 DiodesAmericas@vishay ...

Page 5

... I F through 0.75 I extrapolated to zero current. Document Number: 94608 For technical questions within your region, please contact one of the following: Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, ® HEXFRED Ultrafast Soft Recovery Diode, 120 200 V R 0.01 Ω ...

Page 6

... HFA120FA120P Vishay Semiconductors ORDERING INFORMATION TABLE Device code CIRCUIT CONFIGURATION Dimensions Packaging information www.vishay.com For technical questions within your region, please contact one of the following: 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, ® HEXFRED Ultrafast Soft Recovery Diode, 120 120 FA 120 ® - HEXFRED family Process designator (A = Electron irradiated) ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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