1N4448WS-V-GS08 Vishay, 1N4448WS-V-GS08 Datasheet - Page 2

• Manufacturer Part Number: 1N4448WS-V-GS08
• Description: SWITCHING DIODE GENPURP SOD323-e3
• Manufacturer: Vishay

Specifications of 1N4448WS-V-GS08

• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.15 A
• Max Surge Current: 0.35 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Package / Case: SOD-323-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1N4448WS-V
Vishay Semiconductors
Thermal Characteristics
T
1)
Electrical Characteristics
T
Rectification Efficiency Measurement Circuit
www.vishay.com
2
Thermal resistance junction to ambient air
Junction temperature
Storage temperature
Forward voltage
Leakage current
Diode capacitance
Reverse recovery time
Rectification efficiency
amb
amb
Valid provided that electrodes are kept at ambient temperature.
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
17436
Parameter
60 Ω
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For technical questions within your region, please contact one of the following:
I
F
= 10 mA, I
f = 100 MHz, V
V
R
= 20 V, T
V
Test condition
V
RF
I
R
F
F
V
V
I
F
L
= 100 mA
= V
= 2 V
R
R
R
= 5 mA
= 100 Ω
= 1 mA, V
= 20 V
= 75 V
R
j
= 0 V
= 150 °C
RF
Test condition
= 2 V
R
= 6 V,
Symbol
C
V
V
ην
I
I
I
t
R
R
R
rr
F
F
D
2 nF
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Symbol
Min.
0.45
620
R
T
thJA
T
stg
j
5 kΩ
Typ.
- 65 to + 150
650
Value
150
1)
Document Number 81387
Max.
1000
720
25
50
5
4
4
Rev. 1.1, 12-Aug-10
V
O
K/W
Unit
°C
°C
Unit
mV
mV
nA
µA
µA
pF
ns