BPW34S Vishay, BPW34S Datasheet - Page 3

• Manufacturer Part Number: BPW34S
• Description: PHOTO PIN DIODE TOP VIEW CLEAR-e3
• Manufacturer: Vishay
• Type: Chipr

Specifications of BPW34S

• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 60V
• Peak Wavelength: 900nm
• Dark Current (max): 30nA
• Power Dissipation: 215mW
• Light Current: 75uA
• Rise Time: 100ns
• Fall Time: 100ns
• Photodiode Material: Si
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Lead Free Status / Rohs Status: Compliant

BPW34, BPW34S
Vishay Semiconductors
www.vishay.com
388
94 8418
94 8417
Fig. 5 - Reverse Light Current vs. Reverse Voltage
94 8419
1000
Fig. 4 - Reverse Light Current vs. Illuminance
1000
Fig. 3 - Reverse Light Current vs. Irradiance
100
100
100
0.1
0.1
10
10
10
1
1
1
10
0.01
0.1
1
λ = 950 nm
V
E
R
e
E
- Reverse Voltage (V)
10
0.1
- Irradiance (mW/cm
A
1
2
- Illuminance (lx)
0.2 mW/cm
1 mW/cm
0.05 mW/cm
0.5 mW/cm
0.1 mW/cm
V
For technical questions, contact: [e-mail]
R
= 5 V
10
10
2
1
3
2
λ = 950 nm
2
2
2
V
R
2
)
= 5 V
Silicon PIN Photodiode, RoHS Compliant
10
100
10
4
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
94 8420
94 8406
Fig. 6 - Diode Capacitance vs. Reverse Voltage
948407
1.0
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
80
60
40
20
0
0
0.1
350
0.6
0.4
V
550
R
- Reverse Voltage (V)
λ - Wavelength (nm)
1
0.2
f = 1 MHz
E = 0
750
0°
0
10
Document Number: 81521
10°
950
Rev. 2.0, 08-Sep-08
20°
1150
100
30°
40°
50°
60°
70°
80°