CM100TL-24NF Powerex Inc, CM100TL-24NF Datasheet - Page 2

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CM100TL-24NF

Manufacturer Part Number
CM100TL-24NF
Description
IGBT MODULE NF-SERIES 6-PAC DP 1200 100
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM100TL-24NF

Rohs Compliant
YES
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 100A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
17.5nF @ 10V
Power - Max
620W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM100TL-24NF
Manufacturer:
MITSUBISHI
Quantity:
228
Part Number:
CM100TL-24NF
Manufacturer:
MIT
Quantity:
20 000
2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100TL-24NF
Six IGBTMOD™ NF-Series Module
100 Amperes/1200 Volts
Absolute Maximum Ratings, T
Characteristics
Power Device Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (T
Peak Collector Current (Tj ≤ 150°C)
Emitter Current***
Peak Emitter Current***
Maximum Collector Dissipation (T
Mounting Torque, M5 Mounting Screws
Mounting Torque, M5 Main Terminal Screws
Module Weight (Typical)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Electrical and Mechanical Characteristics, T
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Load
Switch
Time
Reverse Recovery Time***
Reverse Recovery Charge***
Emitter-Collector Voltage***
*T
**Pulse width and repetition rate should be such that device junction temperature (T
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
C
, T
f
measured point is just under the chips.
C
= 80°C)*
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
C
= 25°C, T
j
= 25°C unless otherwise specified
j
< 150°C)
V
V
Symbol
CE(sat)
t
t
I
I
C
GE(th)
C
C
d(on)
d(off)
V
CES
GES
Q
Qrr
t
oes
t
EC
ies
res
t
rr
r
f
G
j
= 25°C unless otherwise specified
Inductive Load Switching Operation
V
CC
I
C
I
C
= 600V, I
= 100A, V
V
R
= 100A, V
V
CC
V
V
V
G
CE
I
GE1
C
GE
I
CE
E
= 3.1Ω, I
= 600V, I
= 10mA, V
j
= 10V, V
Test Conditions
= 100A, V
) does not exceed T
= V
= V
= V
C
GE
= 100A, V
CES
GES
GE
GE2
= 15V, T
E
C
= 15V, T
GE
, V
, V
= 100A,
CE
= 15V,
= 100A,
GE
GE
CE
= 0V
= 10V
= 0V
GE
= 0V
= 0V
j
Symbol
j
= 125°C
V
V
V
T
= 25°C
I
= 15V
I
j(max)
CES
GES
P
CM
EM
I
I
ISO
T
stg
C
E
C
j
rating.
Min.
6
CM100TL-24NF
-40 to 150
-40 to 125
200**
200**
2500
1200
±20
100
100
620
350
31
31
500
Typ.
2.1
2.4
4.8
7
Max.
0.34
17.5
100
300
350
150
0.5
3.0
3.8
1.0
1.5
70
8
Amperes
Amperes
Amperes
Amperes
10/10 Rev. 1
Grams
Watts
Volts
Volts
Volts
Units
in-lb
in-lb
°C
°C
Units
Volts
Volts
Volts
Volts
mA
µA
nC
µC
ns
ns
ns
ns
ns
nf
nf
nf

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