CM150E3U-12H Powerex Inc, CM150E3U-12H Datasheet - Page 3

• Manufacturer Part Number: CM150E3U-12H
• Description: TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,600V V(BR)CES,150A I(C)
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM150E3U-12H

• Rohs Compliant: YES
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 13.2nF @ 10V
• Power - Max: 600W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Voltage: 600V
• Current: 150A
• Circuit Configuration: Chopper, Buck, Boost
• Recommended Gate Driver: VLA504
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM150E3U-12H
Chopper IGBTMOD™ U-Series Module
150 Amperes/600 Volts
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
300
250
200
150
100
50
10
0
8
6
4
2
0
SATURATION VOLTAGE CHARACTERISTICS
0
0
V
T
COLLECTOR-EMITTER VOLTAGE, V
T
GE
j
j
= 25
GATE-EMITTER VOLTAGE, V
= 25 C
15
= 20V
OUTPUT CHARACTERISTICS
o
2
4
C
COLLECTOR-EMITTER
I
C
= 150A
(TYPICAL)
(TYPICAL)
4
8
14
12
6
GE
I
10
13
12
11
C
, (VOLTS)
9
8
I
CE
C
= 300A
16
8
, (VOLTS)
= 60A
10
20
R
R
Symbol
R
R
th(j-c)
th(j-c)
th(j-c)
th(c-f)
300
250
200
150
100
10
10
10
50
Q
D
0
3
2
1
0.6
0
EMITTER-COLLECTOR VOLTAGE, V
V
T
j
CE
j
= 25 C
GATE-EMITTER VOLTAGE, V
= 25 C unless otherwise specified
TRANSFER CHARACTERISTICS
FORWARD CHARACTERISTICS
1.0
= 10V
T
T
Per Module, Thermal Grease Applied
4
j
j
= 25 C
= 125 C
FREE-WHEEL DIODE
1.4
Clamp Diode Part
Test Conditions
(TYPICAL)
(TYPICAL)
8
Per FWDi
Per IGBT
1.8
12
2.2
GE
, (VOLTS)
EC
16
, (VOLTS)
2.6
3.0
20
10
10
10
10
-1
5
4
3
2
1
0
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
f = 1MHz
V
Min.
GE
GE
–
–
–
–
COLLECTOR-CURRENT, I
50
= 0V
= 15V
T
T
j
j
CAPACITANCE VS. V
COLLECTOR-EMITTER
= 25 C
= 125 C
100
10
0.035
0
Typ.
(TYPICAL)
(TYPICAL)
–
–
–
150
200
C
10
, (AMPERES)
Max.
0.21
0.47
0.47
1
–
CE
CE
250
C
, (VOLTS)
C
C
oes
ies
res
Units
C/W
C/W
C/W
C/W
300
10
2
117
117