ESH1PD-M3/84A Vishay, ESH1PD-M3/84A Datasheet - Page 3

1A, 200V, E.FF SMDIODE

ESH1PD-M3/84A

Manufacturer Part Number
ESH1PD-M3/84A
Description
1A, 200V, E.FF SMDIODE
Manufacturer
Vishay
Series
eSMP™r
Datasheet

Specifications of ESH1PD-M3/84A

Voltage - Forward (vf) (max) @ If
900mV @ 1A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
1µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
25ns
Mounting Type
Surface Mount
Package / Case
DO-220AA
Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
1A
Forward Voltage Vf Max
900mV
Reverse Recovery Time Trr Max
25ns
Forward Surge Current Ifsm
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ESH1PD-E3/84A
ESH1PD-E3/84AGITR
ESH1PD-E3/84AGITR
ESH1PD-M3/84AGITR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ESH1PD-M3/84A
Quantity:
70 000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88895
Revision: 08-Jul-09
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
0.01
100
100
0.1
10
0.1
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.2
10
T
J
Percent of Rated Peak Reverse Voltage (%)
= 150 °C
20
0.4
T
Instantaneous Forward Voltage (V)
J
0.086 (2.18)
0.074 (1.88)
= 175 °C
30
0.013 (0.35)
0.004 (0.10)
0.6
T
J
40
= 175 °C
T
J
= 25 °C
T
0.8
T
50
J
J
= 125 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com,
= 125 °C
For technical questions within your region, please contact one of the following:
T
J
0.012 (0.30)
0.000 (0.00)
= 150 °C
60
1.0
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
70
T
Cathode Band
J
1.2
= 25 °C
0.018 (0.45)
0.006 (0.15)
80
1.4
90
100
1.6
0.045 (1.15)
0.033 (0.85)
DO-220AA (SMP)
0.053 (1.35)
0.041 (1.05)
0.100
(2.54)
ESH1PB, ESH1PC & ESH1PD
1000
1000
100
100
10
10
1
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
PDD-Europe@vishay.com
0.103 (2.60)
0.087 (2.20)
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
0.105
(2.67)
0.012 (0.30) REF.
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
(0.635)
0.025
(0.762)
0.030
1
0.036 (0.91)
0.024 (0.61)
0.032 (0.80)
0.016 (0.40)
10
0.050
(1.27)
10
www.vishay.com
100
100
3

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